Related papers: High-quality quantum point contact in two-dimensio…
We briefly overview our recent results on nonequilibrium interactions between neighboring electrically isolated nanostructures. One of the nanostructures is represented by an externally biased quantum point contact (drive-QPC), which is…
We report the observation of ballistic commensurability oscillations and positive magnetoresistance in a high-mobility, (001) GaAs two-dimensional hole system with a unidirectional, surface-strain-induced, periodic potential modulation. The…
We measure the conductance of a quantum point contact (QPC) while the biased tip of a scanning probe microscope induces a depleted region in the electron gas underneath. At finite magnetic field we find plateaus in the real-space maps of…
Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau…
Adiabatically pumped charge, carried by non-interacting electrons through a quantum dot in a turnstile geometry, is studied as function of the strength of the two modulating potentials (related to the conductances of the two point-contacts…
Most quantum point contacts (QPCs) fabricated in high-mobility 2D electron gases show a zero-bias conductance peak near pinchoff, but the origin of this peak remains a mystery. Previous experiments have primarily focused on the zero-bias…
A non-equilibrium Green function formalism (NEGF) is used to study the conductance of a side-gated quantum point contact (QPC) in the presence of lateral spin-orbit coupling (LSOC). A small difference of bias voltage between the two side…
We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the…
Strong spin-orbit interaction characteristic for p-type GaAs systems, makes such systems promising for the realization of spintronic devices. Here we report on transport measurements in nanostructures fabricated on p-type, C-doped GaAs…
We discuss the general transport properties of superconducting quantum point contacts. We show how these properties can be obtained from a microscopic model using nonequilibrium Green function techniques. For the case of a one-channel…
We report on the transport measurements of two-dimensional holes in GaAs field effect transistors with record low densities down to 7*10^8 cm^{-2}. Remarkably, such a dilute system (with Fermi wavelength approaching 1 micrometer) exhibits a…
In the present work, we have investigated ballistic quantum transport in vertical halo implanted p plus minus GaSb InAs n TFETs. We have investigated the current voltage characteristics, ON current, OFF current leakage, subthreshold swing…
Resistive switching phenomenon in carbon film is associated with formation and annihilation of low resistance sp2 nanochannels within the amorphous sp3 matrix. The thinnest point of these graphitic nanochannels behaves like quantum wire…
Understanding topological matter in the fractional quantum Hall (FQH) effect requires identifying the nature of edge state quasiparticles. FQH edge state at the filling factor $\nu=2/3$ in the spin-polarized and non-polarized phases is…
We report systematic quantum Hall transport experiments on Fabry-Perot electron interferometers at ultra-low-temperatures. The GaAs/AlGaAs heterostructure devices consist of two constrictions defined by etch trenches in 2D electron layer,…
The unique properties of quantum Hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling between edge states across a quantum point contact (QPC) has…
The conductance of a ballistic quantum dot (having chaotic classical dynamics and being coupled by ballistic point contacts to two electron reservoirs) is computed on the single assumption that its scattering matrix is a member of Dyson's…
Spin-dependent transport through a two-level quantum dot in the sequential tunneling regime is analyzed theoretically by means of a real-time diagrammatic technique. It is shown that the current, tunnel magnetoresistance, and shot noise…
The ability to realize high-fidelity quantum communication is one of the many facets required to build generic quantum computing devices. In addition to quantum processing, sensing, and storage, transferring the resulting quantum states…
The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to quasiballistic and zero-field to quantum Hall regime.…