Related papers: Manganese-diffusion-induced n-doping in semiconduc…
We explore and systematically compare the morphological, structural and optical properties of GaN/(Al,Ga)N multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epitaxy (PA-MBE) on freestanding GaN$(0001)$ and…
Density functional theory simulations were used to obtain physical properties of GaN/AlN system. Combination of these two compounds into multiquantum well (MQW) structure will induce strong electrostatic effect leading to emergence of high…
An experimental observation on irreversible thermal quenching and antiquenching behavior is reported for photoluminescence (PL) of ZnS/CdS:Mn/ZnS quantum well quantum dots (QWQDs) prepared with a reverse micelle method. The dual-color…
Phase diagram of electron and hole-doped SrFe2As2 single crystals is investigated using Co and Mn substitution at the Fe-sites. We found that the spin-density-wave state is suppressed by both dopants, but the superconducting phase appears…
The detailed nature of electronic states mediating ferromagnetic coupling in dilute magnetic semiconductors, specifically (Ga,Mn)As, has been an issue of long debate. Two confronting models have been discussed emphasizing host band vs.…
We report magneto-photoluminescence studies of strongly quantum-confined "0-D" diluted magnetic semiconductors (DMS), realized in Mn$^{2+}$-doped ZnSe/CdSe core/shell colloidal nanocrystals. In marked contrast to their 3-D (bulk), 2-D…
We present spin wave dispersions in MnO, NiO, and $\alpha$-MnAs based on the quasiparticle self-consistent $GW$ method (\qsgw), which determines an optimum quasiparticle picture. For MnO and NiO, \qsgw results are in rather good agreement…
Opto-spintronics is an emerging field where ultra-thin magnetic-semiconductors having high spin-valley coupling play an important role. Here, we demonstrate substitutional vanadium (V) doping in MoS$_2$ lattice in different extent, leading…
A major challenge for the next generation of spintronics devices is the implementation of ferromagnetic-semiconductor thin films as spin injectors and detectors. Spin-polarised carrier injection cannot be accomplished efficiently from…
Ion implantation of Mn combined with pulsed laser melting is employed to obtain two representative compounds of dilute ferromagnetic semiconductors (DFSs): Ga1-xMnxAs and In1-xMnxAs. In contrast to films deposited by the widely used…
We present here the electronic structure and optical properties of InGaAs quantum wells with barrier doped with Manganese. We calculated the electronic states and optical emission within the envelope function and effective mass…
Carrier-induced ferromagnetic semiconductors (FMSs) have been intensively studied for decades as they have novel functionalities that cannot be achieved with conventional metallic materials. These include the ability to control magnetism by…
Achieving significant doping in GaAs/AlAs core/shell nanowires (NWs) is of considerable technological importance but remains a challenge due to the amphoteric behavior of the dopant atoms. Here we show that placing a narrow GaAs quantum…
We report on the optical spectroscopy of a single InAs/GaAs quantum dot (QD) doped with a single Mn atom in a longitudinal magnetic field of a few Tesla. Our findings show that the Mn impurity is a neutral acceptor state A^0 whose effective…
We study theoretically the nonlinear optical properties of a semiconductor quantum well (QW) irradiated by a two-mode electromagnetic wave consisting of a strong resonant dressing field and a weak off-resonant driving field. In the…
Half-metallic antiferromagnets are the ideal materials for spintronic applications since their zero magnetization leads to lower stray fields and thus tiny energy losses. Starting from the Mn$_2$VAl and Mn$_2$VSi alloys we substitute Co or…
We investigate effect of a step-doping profile on the spin injection from a ferromagnetic metal contact into a semiconductor quantum well (QW) in spin FETs using a Monte Carlo model. The considered scheme uses a heavily doped layer at the…
The dynamics of spin-lattice relaxation of the Mn-ions in (Zn,Mn)Se-based diluted-magnetic-semiconductor quantum wells is studied by time-resolved photoluminescence. The spin-lattice relaxation time varies by five orders of magnitude from…
Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. This electric field, and thus exciton energy, can be reduced…
The influences of Si sheet doping levels on the properties of InAs/GaAs quantum dots (QDs) are investigated by atomic force microscopy (AFM) and photoluminescence (PL). AFM measurements reveal that Si sheet doping doesn't change the…