Related papers: Epitaxial growth under oblique incidence
A discussion of epitaxial growth is presented for those situations (OMVPE, CBE, ALE, MOMBE, GSMBE, etc.) when the kinetics of surface processes associated with molecular precursors may be rate limiting. Emphasis is placed on the…
The coexistence of step bunching and step meandering remains contradictory in the understanding of the unstable step-flow growth. Considered separately, the two instabilities have generated rich but largely independent modeling traditions.…
Obstructions influence the growth and expansion of bodies in a wide range of settings -- but isolating and understanding their impact can be difficult in complex environments. Here, we study obstructed growth/expansion in a model system…
A one-dimensional cellular automaton with a probabilistic evolution rule can generate stochastic surface growth in $(1 + 1)$ dimensions. Two such discrete models of surface growth are constructed from a probabilistic cellular automaton…
A limited mobility nonequilibrium solid-on-solid dynamical model for kinetic surface growth is introduced as a simple description for the morphological evolution of a growing interface under random vapor deposition and surface diffusion…
We propose deposition noise to be an important factor in unstable epitaxial growth of thin films. Our analysis yields a geometrical relation H=(RWL)^2 between the typical mound height W, mound size L, and the film thickness H. Simulations…
Unstable homoepitaxy on rough substrates is treated within a linear continuum theory. The time dependence of the surface width $W(t)$ is governed by three length scales: The characteristic scale $l_0$ of the substrate roughness, the terrace…
Mathematical model that allows for direct tracking of the homoepitaxial crystal growth out of the window etched in the solid, pre-deposited layer on the substrate is described. The growth is governed by the normal (to the crystal-vapor…
Motivated by exploring the thermalization process in relativistic and non-relativistic holographic field theories after a non-local quench, we investigate some features in the time evolution of the entanglement wedge cross section (EWCS).…
The growth process of single layer graphene with and without substrate is investigated using ab initio, finite temperature molecular dynamic calculations within density functional theory. An understanding of the epitaxial graphene growth…
We investigate the growth of a film of some element B on a substrate made of another substrance A in a model of molecular beam epitaxy. A vertical exchange mechanism allows the A-atoms to stay on the growing surface with a certain…
We investigate the influence of step edge diffusion (SED) and desorption on Molecular Beam Epitaxy (MBE) using kinetic Monte-Carlo simulations of the solid-on-solid (SOS) model. Based on these investigations we propose two strategies to…
Normal incidence ion irradiation at elevated temperatures, when amorphization is prevented, induces novel nanoscale patterns of crystalline structures on elemental semiconductors by a reverse epitaxial growth mechanism: on Ge surfaces…
Several experiments have demonstrated the existence of an electro-mechanical effect in many biological tissues and hydrogels, and its actual influence on growth, migration, and pattern formation. Here, to model these interactions and…
In this paper, we study the role of shear fields on the evolution of density perturbations embedded in a Friedmann flat background universe, by studying the evolution of a homogeneous ellipsoid model. In this context, we show that while the…
Spatial optimal responses to both inlet disturbances and harmonic external forcing for hypersonic flows over a blunt cone at nonzero angles of attack are obtained by efficiently solving the direct-adjoint equations with a parabolic…
Low temperature epitaxial breakdown of inhomogeneously strained Si capping layers is investigated. By growing Si films on coherently strained GeSi quantum dot surfaces, we differentiate effects of surface roughness, strain, and growth…
Unstable homoepitaxy on rough substrates is treated within a linear continuum theory. The time dependence of the surface width W(t) is governed by three length scales: The characteristic scale $l_0$ of the substrate roughness, the terrace…
In this article we study a model from epitaxial thin-film growth. It was originally introduced as a phenomenological model of growth in the presence of a Schwoebbel barrier, where diffusing particles on a terrace are not allowed to jump…
Three decades ago Heath found the integral form of the exact analytic growing mode solution of the linear density perturbation $\delta$ on sub-horizon scales including the cosmological constant or the curvature term. Recently, we obtained…