Related papers: Theory of electrical spin-detection at a ferromagn…
We construct a spin-drift-diffusion model to describe spin-polarized electron transport in zincblende semiconductors in the presence of magnetic fields, electric fields, and off-diagonal strain. We present predictions of the model for…
This work analyzes the behavior of the interface between a ferromagnetic material and an alter-magnet. We use a well-established line of arguments based on electronic mean-field calculations to show that new surface phenomena that lead to…
Voltage-driven spin transfer torque in a magnetic tunnel junction comprising magnetic insulating electrodes is studied theoretically. In contrast with the conventional magnetic tunnel junctions comprising transition metal ferromagnets, the…
In a recent publication, we demonstrated electrical spin injection and detection in n-type silicon at temperatures up to 500K using ferromagnetic metal / SiO2 tunnel barrier contacts in a three-terminal geometry (Nature Commun. 2:245…
Spin-flip inelastic electron tunneling spectroscopy allows magnetic materials to be probed at the single-atom level via scanning tunneling microscopy. Previously, the local spectral weight of spin excitations of small systems has been…
The spin-orbit field and interfacial exchange field are two major interface phenomena, and the detection and manipulation of these fields can enable a variety of nanoscale spintronics devices. Optimizing the interfacial exchange field,…
A double-quantum-dot coupled to electrodes with spin-dependent splitting of chemical potentials (spin bias) is investigated theoretically by means of the Green's functions formalism. By applying a large spin bias, the quantum spin in a…
All-electrical control of spin transport in nanostructures has been the central interest and chal- lenge of spin physics and spintronics. Here we demonstrate on-chip spin polarizing/filtering actions by driving the gate-defined one…
We study the perpendicular transport characteristics of small superconductor/ferromagnetic insulator/superconductor (YBa$_2$Cu$_3$O$_{7-x}$/LaMnO$_{3+\delta}$/YBa$_2$Cu$_3$O$_{7-x}$) tunnel junctions. At a large bias voltage $V\sim 1$ V we…
We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate…
We consider the possibility of detecting spin precession in a magnetic field by nonequilibrium transport processes. We find that time reversal symmetry imposes strong constraints on the problem. Suppose the tunneling occurs directly between…
A recent experiment reports a non-local spin-signal that shows oscillatory behavior as a function of gate voltage when the contacts are magnetized along the direction of current flow, but not when they are magnetized perpendicular to the…
Approaching a two-component tip made of a superconductor (S) and a ferromagnet (F) from a magnetic sample allows for two distinct tunneling processes between the ferromagnets, through S: i) Charge and spin are conserved; ii) Charge and spin…
We propose a new method of direct detection of spin accumulation, which overcomes problems of previous measurement schemes. A spin dependent current in a single-electron transistor with ferromagnetic electrodes leads to spin accumulation on…
The problem of spin-dependent transport of electrons through a finite array of quantum dots attached to 1D quantum wire (spin gun) for various semiconductor materials is studied. Unlike the model considered in [1] a model proposed here is…
We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…
We have developed a novel technique for detection of spin polarization with a quantum dot weakly coupled to the objective device. The disturbance to the object in this technique is very small since the detection is performed through…
We report first-principles analysis on the bias dependence of spin-transfer torque (STT) in Fe/MgO/Fe magnetic tunnel junctions. The in-plane STT changes from linear to nonlinear dependence as the bias voltage is increased from zero. The…
Spin-dependent ballistic transport through a tunnel barrier is treated within the one-dimensional nearly-free-electron model. The comparison with free electrons reveals significant effects of band gaps, in particular in the bias dependence.…