Related papers: Gate-induced interlayer asymmetry in ABA-stacked t…
Trilayer graphene exhibits valley-protected gapless states when the stacking order changes from ABC to CBA and a gate voltage is applied to outer layers. Some of these states survive strong distortions of the trilayer. For example, they…
We study the optical response of the alternating twisted trilayer graphene by making use of a unitary transformation for the trilayer Hamiltonian and the Kubo formulation of linear response theory. The layer-resolved optical conductivities…
Trilayer graphene is receiving an increasing level of attention due to its stacking--dependent magnetoelectric and optoelectric properties, and its more robust ferromagnetism relative to monolayer and bilayer variants. Additionally,…
The electronic tunneling properties of the two stable forms of trilayer graphene (TLG), rhombohedral ABC and Bernal ABA, are examined for pn and pnp junctions as realized by using a single gate (SG) or a double gate (DG). For the…
The Landau level spectra and the quantum Hall effect of ABA-stacked multilayer graphenes are studied in the effective mass approximation. The low-energy effective mass Hamiltonian may be partially diagonalized into an approximate…
We investigate transport properties through a rectangular potential barrier in AB-stacked bilayer graphene (AB-BLG) gapped by dielectric layers. Using the Dirac-like Hamiltonian with a transfer matrix approach we obtain transmission and…
In this review, we provide an in-depth description of the physics of monolayer and bilayer graphene from a theorist's perspective. We discuss the physical properties of graphene in an external magnetic field, reflecting the chiral nature of…
We investigate the band structure of ABCA-tetralayer graphene (ABCA-TTLG) subjected to an external potential $V$ applied between top and bottom layers. Using the tight-binding model, including the nearest $t$ and next-nearest-neighbor $t'$…
We investigated the electronic structure, Fermi surface topology and the emergence of valley imbalance in rhombohedral trilayer graphene (RTG) induced by the topological proximity and the electric fields. We show that, a strong proximity…
A density-matrix formalism within the length gauge is developed for the purpose of calculating the nonlinear response of intrinsic bilayer graphene at terahertz frequencies. Employing a tight-binding model, we find that interplay between…
AA-stacked bilayer graphene supports Fermi circles in its bonding and antibonding bands which coincide exactly, leading to symmetry-breaking in the presence of electron-electron interactions. We analyze a continuum model of this system in…
We analyze a class of bound defect states in the continuum electronic spectrum of bilayer materials, which emerge independent of symmetry protection or additional degrees of freedom. Taking graphene as a prototypical example, our…
We calculate the dynamical conductivity of AA-stacked bilayer graphene as a function of frequency and in the presence of a finite chemical potential due to charging. Unlike the monolayer, we find a Drude absorption at charge neutrality in…
In this thesis we will focus on a particular variant of few-layer graphene -- ABA-stacked trilayer graphene. Bernal (ABA) stacked trilayer graphene (TLG) is a multiband system consisting of a pair of Dirac-like massless linear bands and a…
Few layer graphene systems such as Bernal stacked bilayer and rhombohedral (ABC-) stacked trilayer offer the unique possibility to open an electric field tunable energy gap. To date, this energy gap has been experimentally confirmed in…
Domain walls separating regions of AB and BA interlayer stacking in bilayer graphene have attracted attention as novel examples of structural solitons, topological electronic boundaries, and nanoscale plasmonic scatterers. We show that…
We investigate the effect of shear and strain in graphene bilayers, under conditions where the distortion of the lattice gives rise to a smooth one-dimensional modulation in the stacking sequence of the bilayer. We show that strain and…
Theory of spin-orbit coupling in bilayer graphene is presented. The electronic band structure of the AB bilayer in the presence of spin-orbit coupling and a transverse electric field is calculated from first-principles using the linearized…
Double layer graphene is a gapless semiconductor which develops a finite gap when the layers are placed at different electrostatic potentials. We study, within the tight-biding approximation, the electronic properties of the gaped graphene…
We investigate the interplay of in-plane magnetic and transverse electric fields in AB-stacked bilayer graphene. In prior work, we demonstrated that this configuration induces an insulator-metal (IM) transition with large impact on the…