Related papers: Low-field quantum Hall transport in an electron Fa…
We report experiments on Fabry-Perot electron interferometers in the integer quantum Hall regime. The GaAs/AlGaAs heterostructure devices consist of two constrictions defined by etch trenches in 2D electron layer, enclosing an approximately…
We report experiments on a quantum electron interferometer fabricated from high mobility, low density GaAs/AlGaAs heterostructure material. In this device, a nearly circular electron island is defined by four front gates deposited in etched…
We examined the magneto-transport behavior of electrons confined at the conducting LaAlO3/SrTiO3 interface in the low sheet carrier density regime. We observed well resolved Shubnikov-de Haas quantum oscillations in the longitudinal…
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity…
The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to quasiballistic and zero-field to quantum Hall regime.…
Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the…
An apparent h/fe Aharonov-Bohm flux period, where f is an integer, has been reported in coherent quantum Hall devices. Such sub-period is not expected for non-interacting electrons and thus is thought to result from interelectron Coulomb…
The magnetotransport of two dimensional holes in a GaAs/AlGaAs heterostructure is studied experimentally and theoretically. Spin-orbit splitting of the heavy hole band is manifested at high carrier densities in two Shubnikov-de Haas…
We measure the low-field Hall resistivity of a magnetically-doped two-dimensional electron gas as a function of temperature and electrically-gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de…
The low-energy band structure of few-layer MoS$_2$ is relevant for a large variety of experiments ranging from optics to electronic transport. Its characterization remains challenging due to complex multi band behavior. We investigate the…
In quantum Hall systems with two narrow constrictions, tunneling between opposite edges can give rise to quantum interference and Aharonov-Bohm-like oscillations of the conductance. When there is an integer quantized Hall state within the…
Graphene enables precise carrier-density control via gating, making it an ideal platform for studying electronic interactions. However, sample inhomogeneities often limit access to the low-density regimes where these interactions dominate.…
We report magneto-transport measurements on high-mobility two-dimensional electron systems (2DESs) confined in In_0.75Ga_0.25As/In_0.75Al_0.25As single quantum wells. Several quantum Hall states are observed in a wide range of temperatures…
The low-field quantum Hall effect is investigated on a two-dimensional electron system in an AlGaAs/GaAs heterostructure. Magneto-oscillations following the semiclassical Shubnikov-de Haas formula are observed even when the emergence of the…
Resistance oscillations in electronic Fabry-Perot interferometers near fractional quantum Hall (FQH) filling factors 1/3, 2/3, 4/3 and 5/3 in the constrictions are compared to corresponding oscillations near integer quantum Hall (IQH)…
We have performed low-temperature transport measurements on a GaAs two-dimensional electron system at low magnetic fields. Multiple temperature-independent points and accompanying oscillations are observed in the longitudinal resistivity…
We present a systematic characterization of fluctuations in submicron Hall devices based on GaAs/AlGaAs two-dimensional electron gas heterostructures at temperatures between 1.5 K to 60 K. A large variety of noise spectra, from 1/f to…
We present magnetotransport measurements on freely suspended two-dimensional electron gases from AlGaAs/GaAs heterostructures. The technique to realize such devices relies on a specially MBE grown GaAs/AlGaAs-heterostructure including a…
We report on theoretical and experimental investigations of the integer quantized Hall effect in narrow channels at various mobilities. The Hall bars are defined electrostatically in two-dimensional electron systems by biasing metal gates…
We have measured the low-temperature transport properties of a high-mobility front-gated GaAs/Al_{0.33}Ga_{0.67}As heterostructure. By changing the applied gate voltage, we can vary the amount of disorder within the system. At a Landau…