Related papers: Emission of Terahertz Radiation from SiC
A laser pulse composed of a fundamental and properly phased second harmonic exhibits an asymmetric electric field that can drive a time-dependent current of photoionized electrons. The current produces an ultrashort burst of terahertz (THz)…
We report on the emission of terahertz radiation by irradiation of femtosecond laser pulses in non-centrosymmetric paraelectric and ferroelectric phases of Co$_3$B$_7$O$_{13}$I boracite. The Generation of the terahertz waves in both phases…
Scaling femtosecond terahertz (THz) and ultraviolet (UV) sources to high repetition rates is essential for high-throughput ultrafast spectroscopy and imaging applications. Yet, their efficient generation at high average power remains…
We performed phase-sensitive terahertz (0.12 - 1.2 THz) transmission measurements of Ga-enriched layers in silicon. Below the superconducting transition, T_{c} = 6.7 K, we find clear signatures of the formation of a superconducting…
A method for producing narrow-band THz radiation proposes passing an ultra-relativistic beam through a metallic pipe with small periodic corrugations. We present results of a measurement of such an arrangement at Brookhaven's Accelerator…
We report measurements of superradiant optical transition radiation in the 550-800 nm range produced by ultrashort relativistic electron bunches at a dielectric boundary. In the measured optical spectra, we observe photon production with…
Terahertz radiation from the mesa structures of Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ is detected in samples with thin electrodes $< 100$ nm. In samples with thick electrodes $\simeq$ 400 nm, neither radiations nor voltage jumps in…
The terahertz emission from difference-frequency in biased superlattices is calculated with the excitonic effect included. Owing to the doubly resonant condition and the excitonic enhancement, the typical susceptibility can be as large as…
Laboratory measurements of unpolarized and polarized absorption spectra of various samples and crystal stuctures of silicon carbide (SiC) are presented from 1200--35,000 cm$^{-1}$ ($\lambda \sim$ 8--0.28 $\mu$m) and used to improve the…
A laser pulse composed of a fundamental and an appropriately phased second harmonic can drive a time-dependent current of photoionized electrons that generates broadband THz radiation. Over the propagation distances relevant to many…
The spectrum of terahertz (THz) emission in gases via ionizing two-color femtosecond pulses is analyzed by means of a semi-analytic model and finite-difference-time-domain simulations in 1D and 2D geometries. We show that produced THz…
We present in this letter terahertz (THz) metamaterials with low ohmic losses made from low-temperature superconductor niobium nitride (NbN) films. The resonance properties are characterized by THz time-domain spectroscopy. The unloaded…
We demonstrate here an efficient THz source with low electrical power consumption. We have increased the maximum THz radiation power emitted from SI-GaAs based photoconductive emitters by two orders of magnitude. By irradiating the SI-GaAs…
Silicon Carbide (SiC) is a wide bandgap semiconductor material recently being used in replacement of traditional semiconductors for high-voltage power device applications. Radiation environments induce defects through displacement damage in…
We explore the dynamics of a system where input spectra in the optical domain with very disparate center frequencies are strongly coupled via highly phase-matched, cascaded second-order nonlinear processes driven by terahertz radiation. The…
We compute the jerk current tensor of GaAs, Si, and ferroelectric single-layer GeS, GeSe, SnS, and SnSe. We find peak values of the order of $10^{14}$ mA/V$^3$s$^2$ in GaAs and Si within the visible energy spectrum and an order of magnitude…
Terahertz (THz) technology is rapidly evolving, and the advancement of data and information processing devices is essential. Silicon THz microresonators provide perfect platforms to develop compact and integrated devices that could…
Silicon carbide (SiC) exhibits excellent material properties attractive for broad applications. We demonstrate the first SiC optomechanical microresonators that integrate high mechanical frequency, high mechanical quality, and high optical…
Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community. 4H-Silicon Carbide (SiC), especially, is an attractive…
Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the…