Related papers: Bias and angular dependence of spin-transfer torqu…
We predict an unconventional spin-transfer torque (STT) acting on the magnetization of a free ferromagnetic (F) layer within N/TI/F vertical heterostructures which originates from strong spin-orbit coupling (SOC) on the surface of a…
The scaling of magnetic memory into nanometer size calls for a theoretical model to accurately predict the switching current. Previous models show large discrepancy with experiments in studying the spin-orbit torque switching of…
We numerically study ultra fast resonant spin torque (ST) magnetization reversal in magnetic tunnelling junctions (MTJ) driven by current pulses having a direct current (DC) and a resonant alternating current (AC) component. The…
Based on general symmetry considerations we investigate how the dependence of the tunneling anisotropic magnetoresistance (TAMR) on the magnetization direction is determined by the specific form of the spin-orbit coupling field. By…
A microscopic calculation is presented for the spin-transfer torques (STT) and damping torques in metallic antiferromagnets (AF). It is found that the sign of the STT is opposite to that in ferromagnets because of the AF transport…
Using fully self consistent methods, we study spin transport in realistic, fabricable experimental spin valve systems consisting of two magnetic layers, a superconducting layer, and a spacer normal layer between the ferromagnets. Our…
Using the simplest two-subband Stoner model, it is shown that the variation of the Fermi energy under applied magnetic field is inverse proportional to the spontaneous magnetization and hence most pronounced close to the critical Stoner…
A practical problem for memory applications involving perpendicularly magnetized magnetic tunnel junctions is the reliability of switching characteristics at high-bias voltage. Often it has been observed that at high-bias, additional error…
Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each…
We predict that the spin-transfer, $T_{i,||}$, and field-like, $T_{i,\bot}$, components of the {\it local} spin torque are dramatically enhanced in double-barrier magnetic tunnel junctions. The {\it spin-mixing} enhancement is due to the…
A theoretical study on how synchronization and resonance-like phenomena in superparamagnetic tunnel junctions can be driven by spin-transfer torques is presented. We examine the magnetization of a superparamagnetic free layer that reverses…
We demonstrate a scalable new ferromagnetic resonance (FMR) technique based on the spin-orbit interaction. An alternating current drives FMR in uniform ferromagnetic structures patterned from the dilute magnetic semiconductors (Ga,Mn)As and…
We study ns scale spin-torque-induced switching in perpendicularly magnetized tunnel junctions (pMTJ). Although the switching voltages match with the macrospin instability threshold, the electrical signatures of the reversal indicate the…
We report single-shot measurements of resistance versus time for thermally assisted spin-torque-driven switching in magnetic tunnel junctions. We achieve sufficient sensitivity to resolve the resistance signals leading up to switching,…
The shape of the Fermi surface influences many physical phenomena in materials and a growing interest in how the spin-dependent properties are related to the fermiology of crystals has surged. Recently, a novel current-dependent nonlinear…
We propose the two-band s-d model to describe theoretically a diffuse regime of the spin-dependent electron transport in magnetic tunnel junctions (MTJ's) of the form F/O/F where F's are 3d transition metal ferromagnetic layers and O is the…
The antiferromagnets with the time-reversal symmetry broken magnetic structures possess a finite spin splitting in the momentum space, and may contribute to a realization of a finite tunnel magnetoresistance (TMR) effect even with magnets…
We show that the transverse components of spin current in a ferromagnet is linked to an off diagonal spin component of the transmission matrix at interfaces;it has little to do with the mismatch of band structures between dissimilar metals.…
Magnetic tunnel junctions (MTJs) are key components of spintronic devices, such as magnetic random-access memories. Normally, MTJs consist of two ferromagnetic (FM) electrodes separated by an insulating barrier layer. Their key functional…
The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions are studied using first-principles calculations. For small MgO barrier thickness the minority-spin resonant bands at the two interfaces make…