Related papers: Noise in an SSET-resonator driven by an external f…
A single-spin qubit placed near the surface of a conductor acquires an additional contribution to its $1/T_1$ relaxation rate due to magnetic noise created by electric current fluctuations in the material. We analyze this technique as a…
The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a…
High-mobility field effect transistors can serve as resonant detectors of terahertz radiation due to excitation of plasmons in the channel. The modeling of these devices previously relied either on approximate techniques, or complex…
We have found experimentally that the noise of ballistic electron transport in a superconductor/semiconductor/superconductor junction is enhanced relative to the value given by the general relation, S_V=2eIR^2coth(eV/2kT), for two voltage…
The radio frequency single electron transistor (rf-SET) possesses key requirements necessary for reading out a solid state quantum computer. This work explores the use of the rf-SET as a single-shot readout device in the presence of 1/f and…
We present an analytical calculation of the response of a driven Duffing oscillator to low-frequency fluctuations in the resonance frequency and damping. We find that fluctuations in these parameters manifest themselves distinctively,…
We study theoretically the noise-assisted quantum exciton (electron) transfer (ET) in bio-complexes consisting of a single-level electron donor and an acceptor which has a complicated internal structure, and is modeled by many electron…
The shot noise in long diffusive SNS contacts is calculated using the semiclassical approach. At low frequencies and for purely elastic scattering, the voltage dependence of the noise is of the form S_I = (4\Delta + 2eV)/3R. The…
Here we find the increase in 1/f noise of superconducting resonators at low temperatures to be completely incompatible with the standard tunneling model (STM) of Two Level Systems (TLS), which has been used to describe low-frequency noise…
We derive the symmetrized current-noise spectrum of a quantum dot, which is weakly tunnel-coupled to an electron reservoir and driven by a slow time-dependent gate voltage. This setup can be operated as an on-demand emitter of single…
By operating the radio frequency single electron transistor (rf-SET) as a mixer we present measurements in which the RC roll-off of the tunnel junctions is observed at high frequencies. Our technique makes use of the non-linear rf-SET…
The quasi-two-dimensional nature of the charge carriers energy spectrum in layered conductors leads to specific effects in an external magnetic field. The magnetoresistance of layered conductors in a wide range of strong magnetic fields…
We investigate a superconducting single-electron transistor capacitively coupled to a nanomechanical oscillator and focus on the double Josephson quasiparticle resonance. The existence of two coherent Cooper pair tunneling events is shown…
We investigate the dynamics of a single phonon (oscillator) mode linearly coupled to an electronic few-level system in contact with external particle reservoirs (leads). A stationary electronic current through the system generates…
Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by…
A short summary of the drift-diffusion-Langevin formalism for calculating finite-frequency shot noise in diffusive conductors is presented. Two new results are included in this presentation. First, we arrive at a simple (but accurate)…
We calculate the spectral density of voltage fluctuations in a Single Electron Transistor (SET), biased to operate in a transport mode where tunneling events are correlated due to Coulomb interaction. The whole spectrum from low frequency…
We study frequency-dependent current noise through a single-level quantum dot connected to ferromagnetic leads with non-collinear magnetization. We propose to use the frequency-dependent Fano factor as a tool to detect single-spin dynamics…
We calculate the noise spectrum of the electrical current in a quantum point contact which is used for continuous measurements of a two-level system (qubit). We generalize the previous results obtained for the regime of high transport…
We present the noise performance of High Electron Mobility Transistors (HEMT) developed by CNRS-C2N laboratory. Various HEMT's gate geometries with 2 pF to 230 pF input capacitance have been studied at 4 K. A model for both voltage and…