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Silicene, a counterpart of graphene, has achieved rapid development due to its exotic electronic properties and excellent compatibility with the mature silicon-based semiconductor technology. Its low room-temperature mobility of about 100…
Interest in the use of graphene in electronic devices has motivated an explosion in the study of this remarkable material. The simple, linear Dirac cone band structure offers a unique possibility to investigate its finer details by…
In the present study, the anisotropic resistivity of the monolayer graphene has been obtained in semiclassical regime beyond the Dirac point approximation. In particular, detailed investigations were made on the dependence of conductivity…
The unique electronic properties of graphene offer the possibility that it could replace silicon when microelectronics evolves to nanoelectronics. Graphene grown epitaxially on silicon carbide is particularly attractive in this regard…
(See the complete abstract within the thesis in both English and German versions) In this thesis, the process conditions of the epitaxial graphene growth through a socalled polymer-assisted sublimation growth method are minutely…
We provide a thorough study of a carbon divacancy, a fundamental but almost unexplored point defect in graphene. Low temperature scanning tunneling microscopy (STM) imaging of irradiated graphene on different substrates enabled us to…
On the basis of first-principles calculations, we report that a novel interfacial atomic structure occurs between graphene and the surface of silicon carbide, destroying the Dirac point of graphene and opening a substantial energy gap…
Upon cooling, branched line defects develop in epitaxial graphene grown at high temperature on Pt(111) and Ir(111). Using atomically resolved scanning tunneling microscopy we demonstrate that these defects are wrinkles in the graphene…
The flow of charge carriers in materials can, under some circumstances, mimic the flow of viscous fluids. In order to visualize the consequences of such effects, new methodologies must be developed that can probe the quasiparticle flow…
We investigate the electronic structure of terraces of single layer graphene (SLG) by scanning tunneling microscopy (STM) on samples grown by thermal decomposition of 6H-SiC(0001) crystals in ultra-high vacuum. We focus on the perturbations…
Epitaxial graphene grown on transition metal surfaces typically exhibits a moir\'e pattern due to the lattice mismatch between graphene and the underlying metal surface. We use both scanning tunneling microscopy (STM) and atomic force…
Evolution of electronic inhomogeneities with back-gate voltage in graphene on SiO$_2$ was studied using room temperature scanning tunneling microscopy and spectroscopy. The reversal of local contrast in some places in the STS maps and sharp…
We present a formalism and numerical results for the energy loss of a charged particle scattered at an arbitrary angle from epitaxially grown multilayer graphene (MLG). It is compared with that of free-standing graphene layers.…
At a large displacement field, in rhomboedral and Bernal-stacked graphene a normal paramagnetic state transitions to a correlated state. Recent experiments showed that such systems have several phase transitions as a function of the carrier…
The electronic structure of the zero-gap two-dimensional graphene has a charge neutrality point exactly at the Fermi level that limits the practical application of this material. There are several ways to modify the Fermi-level-region of…
In this review we present recent theoretical results concerning investigations of single subsurface defects by means of a scanning tunneling microscope (STM). These investigations are based on the effect of quantum interference between the…
Electron scattering problem in the monolayer graphene with short-range impurities is considered. The main novel element in the suggested model is the band asymmetry of the defect potential in the 2+1-dimensional Dirac equation. This…
Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are…
The crystallographic symmetries and spatial distribution of stacking domains in graphene films on SiC have been studied by low energy electron diffraction (LEED) and dark field imaging in a low energy electron microscope (LEEM). We find…
A detailed review of the literature for the last 5-10 years on epitaxial growth of graphene is presented. Both experimental and theoretical aspects related to growth on transition metals and on silicon carbide are thoroughly reviewed.…