Related papers: Current-induced domain-wall motion in synthetic an…
Ferroelectric domain walls are nanoscale objects that can be created, positioned, and erased on demand. They often embody functional properties that are distinct from the surrounding bulk material. Enhanced conductivity, for instance, is…
Charge-neutral 180$^\circ$ domain walls that separate domains of antiparallel polarization directions are common structural topological defects in ferroelectrics. In normal ferroelectrics, charged 180$^\circ$ domain walls running…
Generally, the dissipationless Hall effect in solids requires time-reversal symmetry breaking (TRSB), where TRSB induced by external magnetic field results in ordinary Hall effect, while TRSB caused by spontaneous magnetization gives rise…
We study current-induced domain-wall motion in a narrow ferromagnetic wire. We propose a way to move domain walls with a resonant time-dependent current which dramatically decreases the Ohmic losses in the wire and allows to drive the…
Antiferromagnetic spintronics is an emerging research field which aims to utilize antiferromagnets as core elements in spintronic devices. A central motivation toward this direction is that antiferromagnetic spin dynamics is expected to be…
A series of microstructures designed to pin domain-walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributions to DW resistance. The former is explained quantitatively…
Magnetic domain walls in antiferromagnets have been proposed as key components for faster conventional information processing, thanks to their enhanced stability and ultrafast propagation. However, how non-conventional computing methods…
As a collective quasiparticle excitation of the magnetic order in magnetic materials, spin wave, or magnon when quantized, can propagate in both conducting and insulating materials. Like the manipulation of its optical counterpart, the…
We studied magnetoresistance (MR) of nanoconstrictions created in (Ga,Mn)As epilayers by O+ ion implantation. Original layers exhibit a negative MR that is plausibly caused by weak localization (WL) effects at the lowest temperatures. In…
We investigate how to facilitate the injection of domain walls in chiral ferromagnetic nanowires by electrical means. We calculate the critical current density above which domain walls are injected into the nanowire depending on the…
The ultrafast magnetic dynamics in compensated ferrimagnets not only provides information similar to antiferromagnetic dynamics, but more importantly opens new opportunities for future spintronic devices [Kim et al., Nat. Mater. 16, 1187…
Control of magnetic domain wall movement by the spin-polarized current looks promising for creation of a new generation of magnetic memory devices. A necessary condition for this is the domain wall shift by a low-density current. Here I…
The jerky dynamics of domain walls driven by applied magnetic fields in disordered ferromagnets -- the Barkhausen effect -- is a paradigmatic example of crackling noise. We study Barkhausen noise in disordered Pt/Co/Pt thin films due to…
The purpose of the research is the construction of the analytical model for description of spin-polarized current-driven ferromagnetic domain wall motion with a skyrmion building block. The dependence of velocity of ferromagnetic domain…
Ferroelectric nitrides have emerged as promising semiconductor materials for modern electronics. However, their domain structures and associated properties are basically unknown, despite their potential to result in optimized or new…
Despite significant advances in the last decade regarding the room temperature stabilization of skyrmions or their current induced dynamics, the impact of local material inhomogeneities still remains an important issue that impedes to reach…
An antiferromagnetic domain wall in a thermal gradient is found to experience a force towards colder regions upon the application of a uniform magnetic field along the easy axis. This force increases with the strength of the applied field…
The effect of magnetic domain boundaries displacement induced by electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) crystallographic orientation). The effect is odd with respect to the electric field…
We examine theoretically the role of spin-waves on current-induced domain wall dynamics in a ferromagnetic wire. At room temperature, we find that an interaction between the domain wall and the spin waves appears when there is a finite…
The spontaneous generation of uniform magnetic condensate in $QED_3$ gives rise to ferromagnetic domain walls at the electroweak phase transition. These ferromagnetic domain walls are caracterized by vanishing effective surface energy…