Related papers: Statistical switching kinetics in ferroelectrics
Polaritonic lattices offer a unique testbed for studying nonlinear driven-dissipative physics. They show qualitative changes of a steady state as a function of system parameters, which resemble non-equilibrium phase transitions. Unlike…
In this paper, starting from a non-convex and nonlocal $3D-$variational model for the electric polarization in a ferroelectric material, and using an asymptotic process based on dimensional reduction, we analyze junction phenomena for two…
We present a first-principles study of model domain walls (DWs) in prototypic ferroelectric PbTiO3. At high temperature the DW structure is somewhat trivial, with atoms occupying high- symmetry positions. However, upon cooling the DW…
For Sn$_2$P$_2$S$_6$ ferroelectrics, the appearance of spontaneous polarization is related to stereoactivity of tin cations and valence fluctuations of phosphorous cations. Here, the continuous phase transition and its behavior under…
The combination of large spontaneous polarization and fluidity makes the newly discovered ferroelectric nematic liquid crystalline phase (NF) responsive to electric fields in ways that have no counterpart in other materials. We probe this…
While $Hf_{0.5}Zr_{0.5}O_2$ (HZO) thin films hold significant promise for modern nanoelectronic devices, a comprehensive understanding of the interplay between their polycrystalline structure and electrical properties remains elusive. Here,…
A method of ultrafast switching of ferroelectric polarization is suggested. The method is based on the interaction of a ferroelectric sample with the feedback field of a resonator in which the sample is inserted. The polarization reversal…
In this work, we investigate the accumulative polarization (P) switching characteristics of ferroelectric (FE) thin films under the influence of sequential electric-field pulses. By developing a dynamic phase-field simulation framework…
The Kondo-Heisenberg model is used for a microscopic demonstration of existence of a peculiar metallic state with unbroken translational symmetry where the Fermi surface volume is not controlled by the total electron density. I use a…
Statistical distribution of switching times is a key information necessary to describe the dynamic response of a polycrystalline bulk ferroelectric to an applied electric field. The Inhomogeneous Field Mechanism (IFM) model offers a useful…
Density functional calculations are performed to investigate the experimentally-reported field-induced phase transition in thin-film ZrO2 (J. Muller et al., Nano. Lett. 12, 4318). We find a small energy difference of ~ 1 meV/f.u. between…
The temperature-dependent polarization of SrTiO_3 thin films is investigated using confocal scanning optical microscopy. A homogeneous out-of-plane and inhomogeneous in-plane ferroelectric phase are identified from images of the linear…
The density matrix renormalization group method is used to examine possibilities of electronic ferroelectricity in the spinless Falicov-Kimball model. The model is studied for a wide range of parameters including weak and strong…
Dynamic phase transition properties of ferromagnetic thin film system under the influence both bias and time dependent magnetic fields have been elucidated by means of kinetic Monte Carlo simulation with local spin update Metropolis…
We have modified Landau-Khalatnikov approach and shown that both the polar lattice and the screened charged defects determine the response of disordered ferroelectric-semiconductors. This system exhibits the spatially inhomogeneous…
The kinetic theory of switching processes in crystalline ferroelectric materials under the influence of a variable external electric field is formulated. The basic equations are derived and their exact analytical solution at arbitrary…
Ferroelectric hafnium zirconium oxide (HZO) thin films show significant promise for applications in ferroelectric random-access memory, ferroelectric field-effect transistors, and ferroelectric tunneling junctions. However, there are…
Monitoring structural changes in ferroelectric thin films during electric field-induced polarization switching is important for a full microscopic understanding of the coupled motion of charges, atoms and domain walls. We combine standard…
Binary ferroelectric nitrides are promising materials for information technologies and power electronics. However, polarization switching in these materials is highly unusual. From the structural perspective, polarization reversal is…
The rotational instability of the electric polarization P during phase transformations between ferroelectric phases is of great practical interest, since it may be accompanied by extremely large values of the piezoelectric coefficient, and…