Related papers: Phonon renormalisation in doped bilayer graphene
In this work, we study the in-plane optical phonon modes of current-carrying single-layer graphene whose coupling to the $\pi$ electron gas is strong. Such modes are expected to undergo a frequency shift compared to the non-current-carrying…
Time-resolved Raman spectroscopy has been applied to probe the anharmonic coupling and electron-phonon interaction of optical phonons in graphite. From the decay of the transient anti-Stokes scattering of the G-mode following ultrafast…
The polarization of graphene is calculated exactly within the random phase approximation for arbitrary frequency, wave vector, and doping. At finite doping, the static susceptibility saturates to a constant value for low momenta. At $q=2…
We show that the electron-phonon coupling in graphene, in contrast with the non-relativistic two-dimensional electron gas, leads to shifts in the phonon frequencies that are non-trivial functions of the electronic density. These shifts can…
We report the observation of anomalously strong 2D band in twisted bilayer graphene (tBLG) with large rotation angles under 638-nm and 532-nm visible laser excitation. The 2D band of tBLG can reach four times as opposed to two times as…
Raman and infrared absorption spectra of Mg(1-x)Al(x)B(2) have been collected for 0<x<0.5 in the spectral range of optical phonons. The x-dependence of the peak frequency, the width and the intensity of the observed Raman lines has been…
Under homogeneous uniaxial strains, the Raman 2D band of graphene involving two-phonon double-resonance scattering processes splits into two peaks and they altogether redshift strongly depending on the direction and magnitude of the strain.…
Density functional theory calculations suggest a pronounced hole electron doping asymmetry in a single layer graphene. It turns out that a single graphene sheet can sustain doping levels up to 0.1 holes or up to a remarkably large 1.9…
In this work, we study the Raman spectra of twisted bilayer graphene samples as a function of their twist-angles ($\theta$), ranging from 0.03$^\circ$ to 3.40$^\circ$, where local $\theta$ are determined by analysis of their associated…
We investigate the doping of AA-stacked graphene bilayers. Applying a mean field theory at zero temperature we find that, at half-filling, the bilayer is an antiferromagnetic insulator. Upon doping, the homogeneous phase becomes unstable…
The Raman 2D line of graphene is widely used for device characterization and during device fabrication as it contains valuable information on e.g. the direction and magnitude of mechanical strain and doping. Here we present systematic…
We examine the coexisting spin and charge density waves as a possible ground state of the magic-angle twisted bilayer graphene. When interactions are not included, the spectrum of the material has 4 (8 if spin is taken into account) almost…
We study the energy gap opening in the electronic spectrum of graphene bilayers caused by asym- metric doping. Both substitutional impurities (boron acceptors and nitrogen donors) and adsorbed potassium donors are considered. The gap…
We present low-temperature Raman measurements on gate tunable graphene encapsulated in hexagonal boron nitride, which allows to study in detail the Raman G and 2D mode frequencies and line widths as function of the charge carrier density.…
We present an analysis of deep-UV Raman measurements of graphite, graphene and carbon nanotubes. For excitation energies above the strong optical absorption peak at the $M$ point in the Brillouin zone ($\approx 4.7\,\text{eV}$), we…
The properties of pristine, free-standing graphene monolayers prepared by mechanical exfoliation of graphite are investigated. The graphene monolayers, suspended over open trenches, are examined by means of spatially resolved Raman…
We present a self-consistent analysis of the photoemission spectral function A(k, w) of graphene monolayers grown epitaxially on SiC(0001). New information derived from spectral intensity anomalies (in addition to linewidths and peak…
We demonstrate that the electronic, thermal, and optical properties of a graphene bilayer with boron and nitrogen dopant atoms can be controlled by the interlayer distance between the layers in which the interaction energy and the van der…
We discuss the physics of the tunable bandgap in bilayer graphene with the gate voltage and doping. A comparison with experimental data obtained by Kuzmenko et al [Phys. Rev. B \textbf{80}, 165406 (2009)] demonstrates the good agreement.
The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the…