Related papers: A complete Raman mapping of phase transitions in S…
Plasma-enhanced chemical vapor deposition of thin a-Si:H layers on transferred large area graphene is investigated. Radio frequency (RF, 13.56 MHz) and very high frequency (VHF, 140 MHz) plasma processes are compared. Both methods provide…
The amorphous-to-crystalline transition in Al(1.0%wtSi)/Zr and Al(Pure)/Zr multilayers grown by direct-current magnetron sputtering system has been characterized over a range of Al layer thicknesses (1.0-5.0 nm) by using a series of…
La$_2$NiO$_{4+\delta}$ has attracted increasing interest in recent years, both as oxygen electrode in solid oxide fuel cells and electrolysers due to its high electrochemical activity at intermediate to high temperatures, and as key…
Highly oriented pyrolitic graphite (HOPG) is an inert substrate with a structural honeycomb lattice, well suited for the growth of two-dimensional (2D) silicene layer. It was reported that when Si atoms are deposited on HOPG surface at room…
In this work, we extend a phase-field approach for pressurized fractures to non-isothermal settings. Specifically, the pressure and the temperature are given quantities and the emphasis is on the correct modeling of the interface laws…
We present a systematic experimental and theoretical study of the two-phonon (2D) Raman scattering in graphene under uniaxial tension. The external perturbation unveils that the 2D mode excited with 785nm has a complex line-shape mainly due…
We investigate quantum phase transitions in ladders of spin 1/2 particles by engineering suitable matrix product states for these ladders. We take into account both discrete and continuous symmetries and provide general classes of such…
Crystalline phases formed in stoichiometric Zr$_9$Ni$_{11}$ and Hf$_9$Ni$_{11}$ have been studied by perturbed angular correlation (PAC) spectroscopy, XRD and TEM/SAED measurements. In Zr$_9$Ni$_{11}$, the phases Zr$_9$Ni$_{11}$…
The Si(001) surface subjected to different treatments in ultrahigh vacuum molecular beam epitaxy chamber for SiO$_2$ film decomposition has been in situ investigated by reflected high energy electron diffraction (RHEED) and high resolution…
Four-point measurements using a multi-tip scanning tunneling microscope (STM) are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first step, distance-dependent four-point measurements in the…
Raman micro-spectroscopy is well suited for studying a variety of properties and has been applied to wide- ranging areas. Combined with tuneable temperature, Raman spectra can offer even more insights into the properties of materials.…
We investigate the interplay of shape changes and localized surface plasmons in small metal particles with the potential of a large enhancement of the Raman signal from the particles own vibrations. The framework is a geometrical one where…
A gauge invariant theory for electronic Raman scattering for superconductors with anisotropic pairing symmetry is analyzed in detail. It is shown that Raman scattering in anisotropic superconductors provides a wealth of…
We study the polarization-dependent electronic Raman response of untwinned YBa$_2$Cu$_3$O$_{7-\delta}$ superconductors employing a tight-binding band structure with anisotropic hopping matrix parameters and a superconducting gap with a…
Electronic Raman scattering measures a polarization-dependent scattering intensity which can provide information about the location of nodes in the energy gap of an unconventional superconductor as well as its overall symmetry. In this…
We review the recent developments in electronic Raman scattering measurements of charge nematic fluctuations in iron-based superconductors. A simple theoretical framework of a $d$-wave Pomeranchuk transition is proposed in order to capture…
In optical diffraction, the phase difference between sources in a grating or multi-slit mask is determined by the angle to the imaging screen, yielding the familiar multi-lobed diffraction image. Here, we realize a similar phenomenon in a…
We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation.Hardness value is measured close to 10 GPa, using a Berkovich indenter. Pop-in burst in the loading line indicates nucleation of dislocations setting in…
Topological crystalline phases in electronic structures can be generally classified using the spatial symmetry characters of the valence bands and mapping them onto appropriate symmetry indicators. These mappings have been recently applied…
The topological invariant of a topological insulator (or superconductor) is given by the number of symmetry-protected edge states present at the Fermi level. Despite this fact, established expressions for the topological invariant require…