Related papers: Hall coefficient and Hc2 in underdoped LaFeAsO0.95…
We report the results of a study of the Hall effect and magnetoresistance in single crystals of Sr2RuO4 in which Sr^(2+) has been substituted by La^(3+) (Sr(2-y)La(y)RuO(4)) or Ru^(4+) by Ti^(4+) (Sr(2)Ru(1-x)Ti(x)O(4)). For undoped…
Electrical resistivity and magnetic susceptibility measurements under high pressure were performed on an iron-based superconductor LaFePO. A steep increase in superconducting transition temperature (Tc) of LaFePO with dTc/dP > 4 K/GPa to a…
We investigated the effects of Ni doping on carrier density and anomalous electrical transport properties in CeCo$_{1-x}$Ni$_x$In$_5$ ($x \leq 0.3$) by performing Hall resistivity measurements. The carrier density, estimated from the Hall…
Using finite-temperature Lanczos method the frequency-dependent Hall response is calculated numerically for the t-J model on the square lattice and on ladders. At low doping, both the high-frequency RH* and the d.c. Hall coefficient RH0…
The observation of dissipationless anomalous Hall current is one of the experimental evidences to confirm the intrinsic origin of anomalous Hall effect. To study the origin of anomalous Hall effect in iron, Fe$_{100-x}$(SiO$_{2}$)$_{x}$…
The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of the von-Klitzing constant RK = h/e2 at zero external…
Measurements in magnetic fields applied at a small angle with respect to the 2D plane of the electrons of a low-density silicon MOSFET indicate that the Hall coefficient is independent of parallel field from H=0 to $H>H_{sat}$, the field…
The Hall coefficient of Gd-doped La_{2/3}Ca_{1/3}MnO_3 exhibits Arrhenius behavior over a temperature range from 2T_c to 4T_c, with an activation energy very close to 2/3 that of the electrical conductivity. Although both the doping level…
Resistivity and Hall effect measurements of EuFe$_2$As$_2$ up to 3.2\,GPa indicate no divergence of quasiparticle effective mass at the pressure $P_\mathrm{c}$ where the magnetic and structural transition disappears. This is corroborated by…
We report high-precision resistance measurements on quantum Hall resistance devices fabricated from uniform epitaxial graphene grown by propane-hydrogen chemical vapor deposition on a two-inch silicon carbide substrate. Through molecular…
We present the high-temperature (70 K < T < 300 K) resistivity anisotropy and Hall effect measurements of the quasi-one-dimensional (1D) organic conductor (TMTTF)2AsF6. The temperature variations of the resistivity are pronouncedly…
Bulk polycrystalline samples, SmFeAsO and the iso-structural superconducting SmFeAsO0.80F0.20 are explored through resistivity with temperature under magnetic field {\rho}(T, H), AC and DC magnetization (M-T), and Specific heat (Cp)…
The magnetic-field dependencies of the longitudinal and Hall resistance of the electron-doped compounds Nd$_{2-x}$Ce$_x$CuO$_{4+\delta}$ in underdoped region with $x$=0.14 and with varying degrees of disorder ($\delta$) were investigated.…
We synthesized the samples $Ba_{1-x}M_xFe_2As_2$ (M=La and K) with $ThCr_2Si_2$-type structure. These samples were systematically characterized by resistivity, thermoelectic power (TEP) and Hall coefficient ($R_H$). $BaFe_2As_2$ shows an…
We present the first experimental results of the lower critical field $H_{c1}$ of the newly discovered F-doped superconductor LaO$_{0.9}$F$_{0.1}$FeAs (F-LaOFeAs) by global and local magnetization measurements. It is found that $H_{c1}$…
The negative Hall constant R_H measured all over the phase diagram of Ba(Fe(1-x)Cox)2As2 allows us to show that electron carriers always dominate the transport properties. The evolution of R_H with x at low doping (x<2%) indicates that…
We present sensitive measurements of the Hall effect and magnetoresistance in CeIrIn${_5}$ down to temperatures of 50 mK and magnetic fields up to 15 T. The presence of a low temperature coherent Kondo state is established. Deviations from…
High-pressure electrical resistivity measurements up to 3.0GPa have been performed on EuFe2As2 single crystals with residual resistivity ratios RRR=7 and 15. At ambient pressure, a magnetic / structural transition related to FeAs-layers is…
High magnetic fields up to 105 T have been utilized in deriving the upper critical field $B_{\rm c2}$ of LaFeAsO$_{1-x}$H$_x$ throughout whole temperatures below $T_{\rm c}$. Resistivity measurements demonstrate that $B_{\rm c2}$ behaves…
By partially substituting the tri-valence element La with di-valence element Sr in $LaOFeAs$, we introduced holes into the system. For the first time, we successfully synthesized the hole doped new superconductors $(La_{1-x}Sr_x)OFeAs$. The…