Related papers: Temperature dependence of ambipolar diffusion in s…
This work focuses on the characterization of various bulk silicon (Si) samples using Fourier Transform InfraRed (FTIR) and grating spectrometers in order to get them suitable for applications in astronomy. Different samples at different…
We report on transport measurement study of top-gated field effect transistors made out of InSb nanowires grown by chemical vapor deposition. The transistors exhibit ambipolar transport characteristics revealed by three distinguished…
We present femtosecond transient transmission (or absorbance) measurements in silicon nanowires in the energy range 1.1-3.5 eV, from below the indirect band-gap to above the direct band-gap. Our pump-probe measurements allow us to give a…
Results on the superconductor to insulator transition in two-dimensional films are analyzed in terms of coupling of the system to a dissipative bath. Upon lowering the temperature the parameter that controls this coupling becomes relevant…
Diffusing-wave spectroscopy is a powerful technique which consists in measuring the temporal correlation function of the intensity of light multiply scattered by a medium. In this paper, we apply this technique to cold atoms under purely…
It has been known for decades that thermal conductivity of insulating crystals becomes proportional to the inverse of temperature when the latter is comparable to or higher than the Debye temperature. This behavior has been understood as…
The aim of this article is to discuss the estimation of the diffusivity coefficient of a homogeneous metal rod from temperature values at a fixed point in the bar for different time instants. The time-dependent problem of heat conduction is…
We have studied diffusion pathways of a silyl radical adsorbed on the hydrogenated Si (100)-(2x1) surface by density-functional theory. The process is of interest for the growth of crystalline silicon by plasma-enhanced chemical vapor…
Temperature effects on the energetics of the 90-degree partial dislocation in silicon and germanium are investigated, using non-equilibrium methods to estimate free energies, coupled with Monte Carlo simulations. Atomic interactions are…
A surface distribution of the electroluminescence intensity of silicon p-n light emitting diodes is obtained under space scanning experiments at room temperature. An emitting surface of the diodes, represented by a few small bright emitting…
We report ultrafast surface pump and interface probe experiments on photoexcited carrier transport across single crystal bismuth films on sapphire. The film thickness is sufficient to separate carrier dynamics from lattice heating and…
Crystalline silicon is currently being discussed as test-mass material for future generations of gravitational wave detectors that will operate at cryogenic temperatures. We present optical absorption measurements on a large-dimension…
The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing…
We present high-resolution thermal diffusivity measurements on several near optimally doped electron- and hole-doped cuprate systems in a temperature range that passes through the Mott-Ioffe-Regel limit, above which the quasiparticle…
Contradictory experiments have been reported about the dimensionality effect on the charge-density-wave transition in 2H NbSe$_2$. While scanning tunnelling experiments on single layers grown by molecular beam epitaxy measure a…
We perform broadband phase sensitive measurements of the reflection coefficient from 45 MHz up to 20 GHz employing a vector network analyzer with a 2.4 mm coaxial sensor which is terminated by the sample under test. While the material…
For semiconductors and semimetals possessing a narrow gap between bands with different parity, the dispersion of the dielectric function is explicitly evaluated in the infrared region. The imaginary part of the dielectric function has a…
The last decade has increasingly seen the use of silicon photomultipliers (SiPMs) instead of photomultiplier tubes (PMTs). This is due to various advantages of the former on the latter like its smaller size, lower operating voltage, higher…
Motivated by the negative thermal expansion observed for silicon between 20 K and 120 K, we present first an ab initio study of the volume dependence of interatomic force constants, phonon frequencies of TA(X) and TA(L) modes, and of the…
The surface of an insulating material irradiated by a beam of low energy electrons charges positively if the yield of secondary electron is greater than unity. For such a dynamical equilibrium, the thermodynamic properties have been…