Related papers: Photoluminescence from localized states in disorde…
A numerical modeling of the radiation emitted from a Luminescent dye embedded in a finite one-dimensional photonic crystal is presented. The Photonic Band Structure and the Photonic Density of States are derived using classical…
In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied…
InP based dilute Bismide InGaAsBi material is emerging as a promising candidate for extending short wavelength infrared detection. One critical factor to limit the performance of these InGaAsBi photodiodes is dark current caused by defects…
The ternary nitride CaZn2N2, composed only of earth-abundant elements, is a novel semiconductor with a band gap of 1.8 eV. First-principles calculations predict that continuous Mg substitution at the Zn site will change the optical band gap…
We have observed momentum- and position-resolved spectra and images of the photoluminescence from thermalised and condensed dye-microcavity photons. The spectra yield the dispersion relation and the potential energy landscape for the…
The magnetic properties of the ferromagnetic semiconductor In0.98Mn0.02As were characterized by x-ray absorption spectroscopy and x-ray magnetic circular dichroism. The Mn exhibits an atomic-like L2,3 absorption spectrum that indicates that…
Samples of amorphous MgSiO_3 annealed at temperature steps leading up to their crystallisation temperature show a rise in photoluminescence activity, peaking at ~450C. The photoluminescence band has a main peak at 595nm and a weaker peak at…
By combining very low temperature scanning tunneling microscopy and spectroscopy on a TiN film we have observed a non uniform state comprising of superconducting (S) and normal (N) areas. The local density of states displays a spatial…
Using resonant 2-photon excitation of interlayer electrons in twisted bilayer graphene (tBLG), we resolve photoluminescence (PL) that tunes spectrally with stacking angle, {\theta}. This weak signal is 4- 5$\times$ larger than the…
A theoretical and experimental study of the spin-dependent photoconductivity in dilute Nitride GaAsN is presented. The non linear transport model we develop here is based on the rate equations for electrons, holes, deep paramagnetic and non…
We investigate strongly asymmetric self-assembled nanostructures with one of dimensions reaching hundreds of nanometers. Close to the nanowire-like type of confinement, such objects are sometimes assigned as one-dimensional in nature. Here,…
We report the experimental observation of radiative recombination from Rydberg excitons in a two-dimensional semiconductor, monolayer WSe2, encapsulated in hexagonal boron nitride. Excitonic emission up to the 4s excited state is directly…
Configurations capable of maximizing both absorptance and polarization contrast were determined for 1550 nm polarized light illumination of different plasmonic structure integrated superconducting nanowire single-photon detectors (SNSPDs)…
We show that fabrication imperfections in silicon nitride photonic crystal waveguides can be used as a resource to efficiently confine light in the Anderson-localised regime and add functionalities to photonic devices. Our results prove…
We report on measurements of the photoluminescence (PL) properties of single nitrogen-vacancy (NV) centers in diamond at temperatures between 4-300 K. We observe a strong reduction of the PL intensity and spin contrast between ca. 10-100 K…
We investigated CeNi9In2 compound, which has been considered as a mixed valence (MV) system. Electrical resistivity vs. temperature variation was analysed in terms of the model proposed by Freimuth for systems with unstable 4f shell. At low…
Controlling macroscopic properties of quantum materials requires the ability to induce and manipulate excited states. The set of collective excitations of a solid is encoded in its dispersion relations. We find that the spectra of the…
The novel phototunable photonic structures based on electrochemically etched silicon filled with four photochromic azobenzene-containing compounds, bent-shaped low molar mass substance and side-chain polymethacrylates and copolyacrylate,…
Based on high quality observations of multiplet V1 of OII and the NLTE atomic computations for OII we study the density and temperature of a sample of PNe. We find that, in general, the densities derived from recombination lines of OII are…
GaN defect-based quantum emitters show significant potential for quantum information technologies, yet their intrinsic nature is not fully understood. In this work, we present results on the temperature-dependent emission polarization of…