Related papers: Flux dependent 1.5 MeV self-ion beam induced sputt…
A new experimental equipment allowing to study the sputtering induced by ion beam irradiation is presented. The sputtered particles are collected on a catcher which is analyzed in situ by Auger electron spectroscopy without breaking the…
Al2O3 thin films have been deposited at substrate temperatures between 500{\deg}C to 600{\deg}C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films…
We have observed the formation of ripples in a number of thin metal films, e.g. Au, Pt, Ag, Cu and Co under Ar^{+} ion beam sputtering at grazing incidence. The structures are found to be quite stable under ambient conditions. The results…
In this work, the authors fabricated Cu2O porous nanostructured films (PNFs) on glass slide substrates by the newly developed positive bias deposition approach in a balanced magnetron sputtering (MS) system. It was found that the surface…
Ion sputtering from loose powders remains poorly understood despite its relevance to planetary science and industry. We developed a multiscale Monte Carlo model to simulate sputtering from powders, using a higher-fidelity approach for the…
A 30 nm Pt thin film evaporated onto a Si wafer was sputtered by 8 keV Ar$^{+}$ ions at various ion doses. The evolution of the modified sputtered films was monitored by atomic force microscopy (AFM), high resolution scanning electron…
Large-area deposition of Aluminium-Scandium-Nitride (Al1-xScxN) thin films with higher Sc content (x) remains challenging due to issues such as abnormal orientation growth, stress control, and the undesired crystal phase. These anomalies…
Epitaxial copper thin films were deposited by magnetron sputtering. The adatoms during deposition are influenced by deposition parameters which cause variations in thin film properties. XRD and FESEM studies were done to get an insight into…
We report on the production of ordered assemblies of silicon nanostructures by means of irradiation of a Si(100) substrate with 1.2 keV Ar ions at normal incidence. Atomic Force and High-Resolution Transmission Electron microscopies show…
Gold nanoclusters are grown by 1.8 MeV Au^\sup{2+} implantation on c-Al\sub{2}O\sub{3}(0001)substrate and subsequent air annealing at temperatures 1273K. Post-annealed samples show plasmon resonance in the optical (561-579 nm) region for…
We report on an XPS study of AlN thin films grown on Si(100) substrates by ion beam sputter deposition (IBSD) in reactive assistance of N+/N2+ ions to unravel the compositional variation of their surface when deposited at different…
This work explores the enhancement of ionization clusters around a gold nanoparticle (NP), indicative of the induction of DNA lesions, a potential trigger for cell-death. Monte Carlo track structure simulations were performed to determine…
This article describes the optical properties of nanostructures composed of silver particles embedded into a gold matrix. In previous studies these materials were shown to exhibit temperature dependent transitions to a highly conductive and…
Combined gold and silicon nano-system has spurred tremendous interest in the scientific community due to its application in different metal-semiconductor electronic devices and solar driven water splitting cells. Silicon, fabricated on gold…
Lowering the operating temperature of Solid Oxide Fuel Cells (SOFCs) is essential for improving durability and enabling large scale commercialization. Mixed ionic-electronic conductors (MIECs) of the Ruddlesden-Popper family, such as…
We have investigated the temperature-dependent morphology and composition changes occurring during a controlled self-assembling of thin Au film on the Gallium arsenide (001) surface utilizing electron microscopy at nano and atomic levels.…
We analyze current-voltage characteristics taken on Au-doped indium-oxide films. By fitting a scaling function to the data, we extract the electron-phonon scattering rate as function of temperature, which yields a quadratic dependence of…
Percolation of gold films of ~15 nm thickness was controlled to achieve the largest openings during Au deposition. Gold was evaporated on 300-nm-thick films of nanostructured porous and columnar SiO2, TiO2 and MgF2 which were deposited by…
Gallium oxide (Ga$_2$O$_3$) is a wide-bandgap semiconductor with exceptional electrical and optical properties, making it a promising material for optoelectronic and sensing applications. In this work, we demonstrate for the first time the…
Chromium thin films deposited on silicon substrates by DC magnetron sputtering were systematically investigated as a function of film thickness, using a DC power of 50 W and a post-deposition annealing temperature of 200 C. Two types of…