Related papers: Energy transfer processes in Er-doped SiO2 sensiti…

In this paper we study a role of F-centers, hole centers and excitons in energy transfer in Eu-doped BaBrI crystals. Optical absorption spectra, thermally stimulated (TSL) and photostimulated (PSL) luminescence in wide temperature range…

Previous luminescence and absorption experiments in Co-doped ZnO revealed two ionization and one intrashell transition of $d(\textrm{Co}^{2+})$ electrons. Those optical properties are analyzed within the generalized gradient approximation…

Silicon films doped with Er and O were prepared by techniques of physical vapor deposition on crystalline silicon, ion beam mixing and oxygen incorporation through Ar+ and O2+ implantation, and thermal annealing. Processing steps were…

The relationship between the luminescence at 1.9 eV and the absorption bands at 2.0 eV and at 4.8 eV were investigated in a wide variety of synthetic silica samples exposed to different gamma- and beta-ray irradiation doses. We found that…

At the (001) interface between the two band-insulators LaAlO3 and SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four years. Its origin is a subject of debate between the interface…

In recent years many experiments have demonstrated the possibility to achieve efficient photoluminescence from Si/SiO2 nanocrystals. While it is widely known that only a minor portions of the nanocrystals in the samples contribute to the…

Recently, epitaxially connected at facets semiconductor nanocrystals (NCs) have been introduced to fascilitate the electron transport between nanocrystals. To fully deploy their potential a better understanding of the exciton transfer…

We present a resonant approach to enhance 1550nm emission efficiency of amorphous silicon sub-oxide doped with Er3+ (a-SiOx<Er>) layers with silicon nanoclusters (Si-NC). Two distinct techniques were combined to provide a structure that…

Erbium ($\text{Er}^{3+}$) emitters are relevant for optical applications due to their narrow emission line directly in the telecom C-band due to the ${}^\text{4}\text{I}_{\text{13/2}}$ $\rightarrow$ ${}^\text{4}\text{I}_{\text{15/2}}$…

Photoluminescence, thermally stimulated luminescence (TSL) and EPR characteristics of the Ce3+ doped single crystals of multicomponent Y1Lu2GaxAl5-xO12 and Lu3GaxAl5-xO12 garnets with different Ga contents (x = 0, 1, 2, 3, 4, 5) excited in…

Erbium implanted silicon (Er:Si) is a promising platform for quantum networking applications, but a major obstacle is the formation of multiple Er centres. We show that the previously identified cubic centre (Er-C) has C2v or lower…

Optical transitions of an Er$_2$O$_3$ film on a Si substrate grown by using a metal-organic chemical vapor deposition technique were investigated in a wide temperature (300 K $\sim$ 5 K) and spectral (500 nm and 850 nm) ranges. Numerous…

Erbium (Er) ions are the gain medium of choice for fiber-based amplifiers and lasers, offering a long excited-state lifetime, slow gain relaxation, low amplification nonlinearity and noise, and temperature stability compared to…

Prior studies have shown that photoluminescence from Er3+ impurities in silicon is severely limited at room temperature by non-radiative relaxation and solid solubility; and room temperature emission from Er3+ in oxide-based hosts becomes…

Gallium arsenide (GaAs) doped with erbium (Er), a material of interest for optoelectronics and quantum information, has been studied for decades. Yet the formation of Er luminescence centers in the semiconductor host and their properties…

For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via…

After more than a century of studies on the optical properties of Bi3+ ions, the assignment of the nature of the emissions and the bands of the absorption spectra remain ambiguous. Here, we report an insight into the spectroscopy of…

We have performed first-principles calculations of Si/SiO$_2$ superlattices in order to examine their electronic states, confinement and optical transitions, using linearized-augmented-plane-wave techniques and density-functional theory.…

The Stark coefficient of the Er 3+ ion in Y 2 SiO 5 is determined for transition). The stark photon echo beating method (SPEB) was used: the pseudo-Stark frequency shift was measured from the period of beats of the temporal form of the…

Erbium ions in crystals show considerable promise for the technologies that will form the backbone of future networked quantum information technology. Despite advances in leveraging erbium's fibre-compatible infrared transition for…