Related papers: A gate-defined silicon quantum dot molecule
We prepare a gate-defined quadruple quantum dot to study the gate-tunability of single to quadruple quantum dots with finite inter-dot tunnel couplings. The measured charging energies of various double dots suggest that the dot size is…
Electron transport experiments on two lateral quantum dots coupled in series are reviewed. An introduction to the charge stability diagram is given in terms of the electrochemical potentials of both dots. Resonant tunneling experiments show…
A two-dimensional arrangement of quantum dots with finite inter-dot tunnel coupling provides a promising platform for studying complicated spin correlations as well as for constructing large-scale quantum computers. Here, we fabricate a…
We report electrical transport measurements through a semiconducting single-walled carbon nanotube (SWNT) with three additional top-gates. At low temperatures the system acts as a double quantum dot with large inter-dot tunnel coupling…
With silicon being the go-to material for spin qubits, and motivated by the demand of a scalable quantum computer architecture for fast and reliable quantum information transfer on-chip, we study coherent electron transport in a silicon…
Semiconductor quantum dot molecules are considered as promising candidates for quantum technological applications due to their wide tunability of optical properties and coverage of different energy scales associated with charge and spin…
We investigate sequential tunneling transport through a semiconductor double quantum dot structure by combining a simple microscopic quantum confinement model with a Mott-Hubbard type correlation model. We calculate nonperturbatively the…
We performed charge detection on a lateral triple quantum dot with star-like geometry. The setup allows us to interpret the results in terms of two double dots with one common dot. One double dot features weak tunnel coupling and can be…
Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited to quantum dots defined in a single plane. Here, we propose…
We study two quantum dots in the limit of strong dot-lead coupling and weak dot-dot tunneling. The model maps on Ising-coupled Kondo impurities. We argue that a new quantum critical fixed point exists at an intermediate value of the mutual…
The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron interaction strength, known as the tunnel coupling, $t_c$. Here,…
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of…
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double…
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrostatic gate has a dominant and unique function -- control of…
Recent advances in semiconductor spin qubits have achieved linear arrays exceeding ten qubits. Moving to two-dimensional (2D) qubit arrays is a critical next step to advance towards fault-tolerant implementations, but it poses substantial…
A double quantum dot is formed in a graphene nanoribbon device using three top gates. These gates independently change the number of electrons on each dot and tune the inter-dot coupling. Transport through excited states is observed in the…
Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest…
Spins based in silicon provide one of the most promising architectures for quantum computing. Quantum dots are an inherently scalable technology. Here, we combine these two concepts into a workable design for a silicon-germanium quantum…
Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons…
We present quantum transport measurements of interacting parallel quantum dots formed in the strands of a carbon nanotube rope. In this molecular quantum dot system, transport is dominated by one quantum dot, while additional resonances…