Related papers: Negative differential resistance in molecular junc…
Combining insights from quantum chemistry calculations with master equations, we discuss a mechanism for negative differential resistance (NDR) in molecular junctions, operated in the regime of weak tunnel coupling. The NDR originates from…
A new mechanism is proposed to explain the origin of negative differential resistance (NDR) in a strongly coupled single molecule-metal junction. A first-principles quantum transport calculation in a Fe-terpyridine linker molecule…
In this work, we clarify the physical mechanism for the phenomenon of negative output differential resistance (NDR) in short-channel graphene FETs (GFETs) through non-equilibrium Green's function (NEGF) simulations and a simpler…
Negative differential resistance (NDR) is tuned at junctions of electronically different dimer and trimer of Rose Bengal on an atomic flat gold (111) surface. Isolated molecule did not show any NDR. But it was induced to show double NDR…
Hexagonal boron nitride (hBN) is drawing increasing attention as an insulator and substrate material to develop next generation graphene-based electronic devices. In this paper, we investigate the quantum transport in heterostructures…
We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance…
Using non-equilibrium Green's function formalism, we investigate nonlinear transport and charging effects of gated graphene nanoribbons (GNRs) with even number of zigzag chains. We find a negative differential resistance (NDR) over a wide…
Graphene nanoribbons with armchair edges (AGNRs) have bandgaps that can be flexibly tuned via the ribbon width. A junction made of a narrower AGNR sandwiched between two wider AGNR leads was recently reported to possess two perfect…
Field effect transistors with channels made of graphene layer(s) were explored. The graphene layer(s) contacted a distributed array of well-separated semiconductor quantum dots (QDs). The dots were embedded in nano-structured hole-array;…
We unravel the critical role of vibrational mode softening in single-molecule electronic devices at high bias. Our theoretical analysis is carried out with a minimal model for molecular junctions, with mode softening arising due to…
We have carried out calculations of electron transport through a metal-molecule-metal junction with metal nanoclusters taking the part of electrodes. We show that negative differential resistance peaks could appear in the current-voltage…
Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor…
A negative differential resistance (NDR) in the nanotransport is often ascribed to electron correlations. We present a simple example which demonstrates that finite electrode bandwidths and energy dependent electrode density of states are…
The electronic nonlinear transport through ultra narrow graphene nanoribbons (sub-$10nm$) is studied. A stable region of negative differential resistance (NDR) appears in the I-V characteristic curve of {\it odd} zigzag graphene nanoribbons…
We study the electronic and transport properties of two novel molecular wires made of atomic chains of carbon atoms (polyynes) capped with either, benzene-thiols or pyridines. While both molecules are structurally similar, the electrical…
Negative differential resistance - a decrease in current with increasing bias voltage - is a counter-intuitive effect that is observed in various molecular junctions. Here, we present a novel mechanism that may be responsible for such an…
Vertically stacked two-dimensional (2D) van der Waals (vdW) heterostructures based on graphene electrodes represent a promising architecture for next-generation electronic devices. However, their first-principles characterizations have been…
We theoretically investigate negative differential resistance (NDR) for ballistic transport in semiconducting armchair graphene nanoribbon (aGNR) superlattices (5 to 20 barriers) at low bias voltages V_SD < 500 mV. We combine the graphene…
Multipeak negative differential resistance (NDR) molecular devices are designed from first principles. The effect of NDR is associated with the non-linear Stark shifts and the electron localization within the conductive region and contacts.…
We have elaborately studied the electronic structure of 555-777 divacancy (DV) defected armchair edged graphene nanoribbon (AGNR) and transport properties of AGNR based two-terminal device constructed with one defected electrode and one N…