Related papers: Ion beam induced enhanced diffusion from gold thin…
Crystalline Silicon-on-Sapphire (SOS) films were implanted with boron (B$^+$) and phosphorous (P$^+$) ions. Different samples, prepared by varying the ion dose in the range $10^{14}$ to 5 x $10^{15}$ and ion energy in the range 150-350 keV,…
In this paper we explore the effects of 3.5 MeV proton irradiation on Fe(Se,Te) thin films grown on CaF2. In particular, we carry out a systematic experimental investigation with different irradiation fluences up to 7.30x10^16 cm^-2 and…
A new experimental equipment allowing to study the sputtering induced by ion beam irradiation is presented. The sputtered particles are collected on a catcher which is analyzed in situ by Auger electron spectroscopy without breaking the…
Superconducting boron-doped silicon films prepared by gas immersion laser doping (GILD) technique are analyzed by atom probe tomography. The resulting three-dimensional chemical composition reveals that boron atoms are incorporated into…
We present experimental studies on ion acceleration from ultra-thin diamond-like carbon (DLC) foils irradiated by ultra-high contrast laser pulses of energy 0.7 J focussed to peak intensities of 5*10^{19} W/cm^2. A reduction in electron…
Photoluminescence is observed at room temperature from phonon-assisted band-to-band emission in Si (1.067 eV peak) using unpatterned bulk p-type silicon wafer samples that were spin-coated with Er-doped (6 at. %) silica-gel films (0.13…
Superconducting resonators used in millimeter-submillimeter astronomy would greatly benefit from deposited dielectrics with a small dielectric loss. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor…
We report the successful imaging of flux vortices in single crystal MgB2 using transmission electron microscopy. The specimen was thinned to electron transparency (350 nm thickness) by focussed ion beam milling. An artefact of the thinning…
Comparative studies of the resonant transmission of light in the vicinity of exciton resonances, measured for 15 few-micron GaAs crystal slabs with different impurity concentrations $N$, reveal an unexpected tendency. While $N$ spans almost…
We present coarse-grained simulation results for enhanced ion diffusion in a charged nanopore grafted with ionomer sidechains. The pore surface is hydrophobic and its diameter is varied from 2.0 nm to 3.7 nm. The sidechains have from 2 to…
The slow advance of a crack in sodo-silicate glasses was studied at nanometer scale by in situ and real time atomic force microscopy (AFM) in a well controlled atmosphere. An enhanced diffusion of sodium ions in the stress gradient field at…
Superconducting magnesium diboride films with Tc0 ~ 24 K and sharp transition \~ 1 K were successfully prepared on silicon substrates by pulsed laser deposition from a stoichiometric MgB2 target. Contrary to previous reports, anneals at 630…
We report optical absorption and photoluminescence spectra of Au, Fe, Co and Ni polycrystalline nanofilms in the UV-Vis-NIR range, featuring discrete bands resulting from transverse quantum confinement. The film thickness ranged from 1.1 to…
The shape of metal nanoparticles embedded in dielectric matrices influences the optical properties of the composite material. Swift heavy ion irradiation can induce a controllable shape transformation in gold and other metals embedded in…
Scattering of phonons at boundaries of a crystal (grains, surfaces, or solid/solid interfaces) is characterized by the phonon wavelength, the angle of incidence, and the interface roughness, as historically evaluated using a specularity…
Niobium metal occupies nearly 100\% of the volume of a typical 2D transmon device. While the aluminum Josephson junction is of utmost importance, maintaining quantum coherence across the entire device means that pair-breaking in Nb leads,…
Ion-irradiation-induced modifications of a periodic Pt/C multilayer system containing Fe impurity have been analyzed by transmission electron microscopy (TEM). The multilayer stack with 16 Pt/C layer pairs (period 4.23 nm) was fabricated on…
Thermal detectors are a cornerstone of infrared (IR) and terahertz (THz) technology due to their broad spectral range. These detectors call for suitable broad spectral absorbers with minimalthermal mass. Often this is realized by plasmonic…
Ion implantation is widely used to modify the structural, electrical and optical properties of materials. By appropriate masking, this technique can be used to define nano- and micro-structures. However, depending on the type of mask used,…
The growth and characterization of Bismuth (Bi) substituted YIG (Bi-YIG, Bi0.1Y2.9Fe5O12) thin films are reported. Pulsed laser deposited (PLD) films with thicknesses ranging from 20 to 150 nm were grown on Gadolinium Gallium Garnet…