English
Related papers

Related papers: Tunable spin-gaps in a quantum-confined geometry

200 papers

Topological materials have gained significant attention in condensed matter physics due to their unique electronic and transport properties. Three-dimensional (3D) topological materials are characterized by robust electronic states that are…

Materials Science · Physics 2025-01-03 Jaime Sánchez-Barriga , Oliver J. Clark , Oliver Rader

Its direct momentum sensitivity confers to angle-resolved photoemission spectroscopy (ARPES) a unique perspective in investigating the superconducting gap of multi-band systems. In this review we discuss ARPES studies on the superconducting…

Superconductivity · Physics 2015-07-10 P. Richard , T. Qian , H. Ding

Spin splitting in p-type semiconductor nanowires is strongly affected by the interplay between quantum confinement and spin-orbit coupling in the valence band. The latter's particular importance is revealed in our systematic theoretical…

Mesoscale and Nanoscale Physics · Physics 2008-01-16 D. Csontos , U. Zuelicke

We report first-principles results on the electronic structure of various silicene structures. For planar and simply buckled silicenes, we confirm their zero-gap nature and show a significant renormalization of their Fermi velocity by…

Mesoscale and Nanoscale Physics · Physics 2015-06-12 Shouting Huang , Wei Kang , Li Yang

Small-twist-angle bilayer graphene supports strongly correlated insulating states and superconductivity. Twisted few-layer graphene systems are likely to open up new directions for strong correlation physics in moir\'e superlattices. We…

Materials Science · Physics 2019-07-30 Xiao Li , Fengcheng Wu , Allan H. MacDonald

The wave nature of electrons in semiconductor nanostructures results in spatial interference effects similar to those exhibited by coherent light. The presence of spin-orbit coupling renders interference in spin space and in real space…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 U. Zuelicke

We have used an eight band model to investigate the electronic structures and to calculate the optical matrix elements of InAs-GaSb broken gap semiconductor heterostructures. The unusual hybridization of the conduction band states in InAs…

Materials Science · Physics 2009-10-31 E. Halvorsen , Y. Galperin , K. A. Chao

When passing through a phase transition, electronic system saves energy by opening energy gaps at the Fermi level. Delineating the energy gap anisotropy provides insights into the origin of the interactions that drive the phase transition.…

Superconductivity · Physics 2020-07-21 T. T. Han , L. Chen , C. Cai , Y. D. Wang , Z. G. Wang , Z. M. Xin , Y. Zhang

We discuss the fine structure and spin dynamics of spin-3/2 centers associated with silicon vacancies in silicon carbide. The centers have optically addressable spin states which makes them highly promising for quantum technologies. The…

Mesoscale and Nanoscale Physics · Physics 2018-02-14 S. A. Tarasenko , A. V. Poshakinskiy , D. Simin , V. A. Soltamov , E. N. Mokhov , P. G. Baranov , V. Dyakonov , G. V. Astakhov

We investigate the structure and electronic spectra properties of two-dimensional amorphous bismuthene structures and show that these systems are topological insulators. We employ realistic modeling of amorphous geometries together with…

Materials Science · Physics 2021-03-01 Bruno Focassio , Gabriel R. Schleder , Marcio Costa , Adalberto Fazzio , Caio Lewenkopf

Spin splitting in electronic band structures via antiferromagnetic orders is a new route to control spin-polarized carriers that is available for spintronics applications. Here, we investigated the spin degree of freedom in the electronic…

2D materials have intriguing quantum phenomena that are distinctively different from their bulk counterparts. Recently, epitaxially synthesized wafer-scale 2D metals, composed of elemental atoms, are attracting attention not only for their…

Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied…

We performed in-situ angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES (SARPES) experiments to investigate the relationship between electronic band structures and ferromagnetism in SrRuO$_3$ (SRO) thin films. Our…

We study the spin orbit torque arising from an intrinsic linear Dresselhaus spin-orbit coupling in a single layer III-V diluted magnetic semiconductor. We investigate the transport properties and spin torque using the linear response theory…

Mesoscale and Nanoscale Physics · Physics 2013-05-17 Hang Li , Xuhui Wang , Fatih Dogan , Aurelien Manchon

The physics of quantum materials is dictated by many-body interactions and mathematical concepts such as symmetry and topology that have transformed our understanding of matter. Angle-resolved photoemission spectroscopy (ARPES), which…

Strongly Correlated Electrons · Physics 2021-05-31 Jonathan A. Sobota , Yu He , Zhi-Xun Shen

We report an angle-resolved photoemission spectroscopy (ARPES) study on IrTe2 which exhibits an interesting lattice distortion below 270 K and becomes triangular lattice superconductors by suppressing the distortion via chemical…

We investigate the optical response of the silicene and similar materials, such as germanene, in the presence of an electrically tunable band gap for variable doping. The interplay of spin orbit coupling, due to the buckled structure of…

Mesoscale and Nanoscale Physics · Physics 2012-11-07 Lukas Stille , Calvin J. Tabert , Elisabeth J. Nicol

We theoretically consider coherence times for spins in two quantum computer architectures, where the qubit is the spin of an electron bound to a P donor impurity in Si or within a GaAs quantum dot. We show that low temperature decoherence…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 Rogerio de Sousa , S. Das Sarma

We have studied theoretically the effect of a tuneable lateral confinement on two-dimensional hole systems realised in III-V semiconductor heterostructures. Based on the 4x4 Luttinger description of the valence band, we have calculated…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 U. Zuelicke
‹ Prev 1 3 4 5 6 7 10 Next ›