Related papers: Carrier relaxation in Si/SiO$_2$ quantum dots
We expand on previous work that treats relaxation physics of low-lying excited states in ideal, single electron, silicon quantum dots in the context of quantum computing. These states are of three types: orbital, valley, and spin. The…
Direct phonon spin-lattice relaxation of an electron qubit bound by a donor impurity or quantum dot in SiGe heterostructures is investigated. The aim is to evaluate the importance of decoherence from this mechanism in several important…
Low-energy instabilities in the hole doped cuprates include, besides short range antiferromagnetic fluctuations and superconductivity, also ubiquitous translational and rotational symmetry breakings. The overwhelming majority of…
Quantum dots are arguably the best interface between matter spin qubits and flying photonic qubits. Using quantum dot devices to produce joint spin-photonic states requires the electronic spin qubits to be stored for extended times.…
In this work, we investigate the influence of torsion, Aharonov-Bohm flux, and external magnetic fields on the linear and nonlinear optical properties of a confined quantum system. The confinement potential is not assumed a priori, but…
The relaxation dynamics of hot carriers in silicon (100) is studied via a novel holistic approach based on phase-resolved transient absorption spectroscopy with few-cycle optical pulses. After excitation by a sub-5 fs light pulse, strong…
Differences in the confinement of electrons and holes in quantum dots are shown to profoundly impact the magnitude of scattering with acoustic phonons in materials where crystal deformation shifts the conduction and valence band in the same…
We review recent studies on spin decoherence of electrons and holes in quasi-two-dimensional quantum dots, as well as electron-spin relaxation in nanowire quantum dots. The spins of confined electrons and holes are considered major…
We suggest universal expressions for the rates of charge transition between molecules in organic disordered semiconductors, which differ between electrons and holes. The donor and acceptor molecules (monomers) are represented in terms of…
We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO$_2$ interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. First, using atomistc tight-binding calculations we show that…
The relaxation of strongly-confined electrons and holes between 1P and 1S levels in colloidal PbSe nanocrystals has been time-resolved using femtosecond transient absorption spectroscopy. In contrast to II-VI and III-V semiconductor…
Transport of charge carriers in mechanically soft semiconductors is mainly limited by their interaction with slow intermolecular phonons. Carrier motion exhibits a crossover from superdiffusive to subdiffusive, producing a distinct…
Electron spin decoherence caused by elastic spin-phonon processes is investigated comprehensively in a zero-dimensional environment. Specifically, a theoretical treatment is developed for the processes associated with the fluctuations in…
Long-distance transfer of quantum information in architectures based on quantum dot spin qubits will be necessary for their scalability. One way of achieving it is to simply move the electron between two quantum registers. Precise control…
new defect-assisted mechanism of multiphonon intraband carrier relaxation in semiconductor quantum dots, where the carrier is found in a coherent superposition of the initial, final, and defect states, is proposed. It is shown that this…
In this paper we investigate coherent and squeezed quantum states of phonons. The latter allow the possibility of modulating the quantum fluctuations of atomic displacements below the zero-point quantum noise level of coherent states. The…
We present the findings of the spin-dependent transport of the 2D holes in the p-type ultra-narrow self-assembled silicon quantum well (Si-QW) confined by the superconductor barriers on the n-type Si (100) surface. The Aharonov-Casher…
Studies of electronic charge transport through semiconductor double quantum dots rely on a conventional "hole" model of transport in the three-electron regime. We show that experimental measurements of charge transport through a Si double…
We study the kinetics of confined carrier-phonon system in a quantum dot under fast optical driving and discuss the resulting limitations to fast coherent control over the quantum state in such systems.
CuInS2 quantum dots have been studied in a broad range of applications, but despite this, the fine details of their charge carrier dynamics remain a subject of intense debate. Two of the most relevant points of discussion are the hole…