Related papers: Localization and interaction of indirect excitons …
When the coupling between light and matter becomes comparable to the energy gap between different excited states they hybridize, leading to the appearance of a rich and complex phenomenology which attracted remarkable interest in recent…
We present a model for the disorder of the heterointerfaces in GaAs quantum wells including long-range components like monolayer island formation induced by the surface diffusion during the epitaxial growth process. Taking into account both…
We study semiconductor excitons confined in an electrostatic trap of a GaAs bilayer heterostructure. We evidence that optically bright excitonic states are strongly depleted while cooling to sub-Kelvin temperatures. In return, the other…
The bound electron-hole pairs known as excitons govern the optical properties of insulating solids. While their behavior in equilibrium is well-understood theoretically, the nonequilibrium regime at high excitation densities-where phenomena…
We present a fully three-dimensional study of the multiexciton optical response of vertically coupled GaN-based quantum dots via a direct-diagonalization approach. The proposed analysis is crucial in understanding the fundamental properties…
The novel method of observation and controlling of Bose-Einstein condensation in the system of spatially and momentum-space indirect excitons in coupled quantum wells using in-plane magnetic and normal electric fields is proposed. Fields…
A phenomenological theory of exciton condensation in conditions of inhomogeneous excitation is proposed. The theory is applied to the study of the development of an exciton luminescence ring and the ring fragmentation at macroscopical…
Using a nonlinear Schr\"odinger equation including short-range two-body attraction and three-body repulsion, we investigate the spatial distribution of indirect excitons in semiconductor coupled quantum wells. The results obtained can…
Variations in the width of a quantum well (QW) are known to be a source of broadening of the exciton line. Using low temperature near-field optical microscopy, we have exploited the dependence of exciton energy on well-width to show that in…
A GW calculation based on a truncated Coulomb interaction with an added small q limit was applied to 2D van der Waals heterolayered structures, and the Kane dispersion model was used to determine the accurate band gap edge. All ab initio…
Nonperturbative coupling between cavity photons and excitons leads to formation of hybrid light-matter excitations termed polaritons. In structures where photon absorption leads to creation of excitons with aligned permanent dipoles, the…
The localization length of a low energy tightly bound electron-hole pair (excitons) is calculated by exact diagonalization for small interacting disordered systems. The exciton localization length (which corresponds to the thermal…
Bose Einstein condensation of exciton-polaritons has recently been reported in homogeneous structures only affected by random in-plane fluctuations. We have taken advantage of the ubiquitous defects in semiconductor microcavities to reveal…
Optical transitions in coupled InAs/InP self-assembled quantum wires are studied within the single-band effective mass approximation including effects due to strain. Both vertically and horizontally coupled quantum wires are investigated…
The power-law increase of the conductivity with temperature in the nominally insulating regime, recently reported for the dilute two-dimensional holes [cond-mat/0603053], is found to systematically vary with the carrier density. Based on…
We performed spectroscopic studies of a single GaAs quantum ring with an anisotropy in the rim height. The presence of an asymmetric localised state was suggested by the adiabatic potential. The asymmetry was investigated in terms of the…
We report the fabrication and photoluminescence properties of laterally-coupled GaAs/AlGaAs quantum dots. The coupling in the quantum dot molecules is tuned by an external electric field. An intricate behavior, consisting of spectral line…
(Ga,In)As/GaAs/Ga(As,Sb) multi-quantum well heterostructures have been investigated using continuous wave and time-resolved photoluminescence spectroscopy at various temperatures. A complex interplay was observed between the excitonic…
Cathodoluminescence spectra employing a shadow mask technique of InGaN layers grown by metal organic chemical vapor deposition on Si(111) substrates are reported. Sharp lines originating from InGaN quantum dots are observed. Temperature…
The entanglement of an optically generated electron-hole pair in artificial quantum dot molecules is calculated considering the effects of decoherence by interaction with environment. Since the system evolves into a mixed states and due to…