Related papers: Studies of Effects of Current on Exchange-Bias: A …
When a spin-polarized current flows through a ferromagnetic (FM) metal, angular momentum is transferred to the background magnetization via spin-transfer torques. In antiferromagnetic (AFM) materials, however, the corresponding problem is…
Giant or tunneling magnetoresistance are physical phenomena used for reading information in commercial spintronic devices. The effects rely on a conserved spin current passing between a reference and a sensing ferromagnetic electrode in a…
Magnetization and magnetic microstructure of top soft magnetic layer (Fe), which is exchange spring coupled to bottom hard magnetic layer ($L1_0$ FePt) is studied using high resolution Kerr microscopy. When the sample (FePt/Fe) is at…
It has been shown experimentally a long time ago that the magnetic ordering causes an anomalous behavior of the electron resistivity in ferromagnetic crystals. Phenomenological explanations based on the interaction between itinerant…
Antiferromagnets (AFMs) hold promise for applications in digital logic. However, switching AFM domains is challenging, as magnetic fields do not couple to the bulk antiferromagnetic order parameter. Here we show that magnetic-field-driven…
Efficient control of antiferromagnetic (AFM) domain switching in thin films is vital for advancing antiferromagnet-based memory devices. In this study, we directly observed the current-driven switching process of CoO AFM domains in the…
Electrical current-induced deterministic magnetization switching in a magnetic multilayer structure without external magnetic field is realized by utilizing interlayer exchange coupling. Two ferromagnetic Co layers, with in-plane and…
Laser-induced ultrafast (fs) magnetization experiments in antiferromagnets have recently attracted large attention, paving the road for inherently fast spin dynamics in the THz regime without invoking stray fields. The technical importance…
We report on the study of electron transport in the oxide heterostructures with superconductor/magnetic matter (S/M) interfaces where anomaly large penetration of superconducting correlations in magnetic matter (proximity effect) is…
The axial magnetic effect (AME) is one of the anomalous transport phenomena in which the energy current is induced by an axial magnetic field. Here, we numerically study the AME for the relativistic Wilson fermion in the axial magnetic…
The effect of strain on the magnetic order and band structure of single-layer CrAsS$_4$ has been investigated by first-principles calculations based on density functional theory. We found that single-layer CrAsS$_4$ was an antiferromagnetic…
Alternating current susceptibility and direct current magnetization have been studied for polycrystalline Ca$_{1-x}$Mn$_x$O. On increasing the Mn content, magnetic ordering changes from spin-glass behavior for $0.25 \leqslant x \leqslant…
Photoirradiation effects in correlated electrons coupled with localized spins are studied based on the extended double-exchange model. In particular, we examine melting of an antiferromagnetic (AFM) charge order insulating state by varying…
Collinear antiferromagnets (AFs) support two degenerate magnon excitations carrying opposite spin polarizations, by which magnons can function as electrons in various spin-related phenomena. In an insulating ferromagnet(F)/AF/F trilayer, we…
The exchange bias (EB) effect was discovered 60 years ago by Meiklejohn and Bean. Meanwhile the EB effect has become an integral part of modern magnetism with implications for basic research and for numerous device applications. The EB…
We report experimental evidence of formation of antiferromagnetic clusters in composites made of a cuprate superconductor La1.85Sr0.15CuO4 (LCu) and a ferromagnet La0.6Sr0.4CoO3 (LCo). From linear and non-linear ac-susceptibility…
We study clean ferromagnet-superconductor-ferromagnet (FSF) nanostructures in which the magnetization of the F layers can be parallel (P) or antiparallel (AP). We consider the case where the thickness of the S layer is of order of the…
The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane provide superior stability against thermal noise, it has…
Modern magnetic thin film devices owe their success in large part to effects emerging from interlayer coupling and exchange interaction at interfaces. A prominent example is exchange bias (EB), a magnetic coupling phenomenon found in…
A large magnetoresistance (MR) effect was observed in the layered compounds NdCoAsO and SmCoAsO, in which ferromagnetically ordered itinerant-electrons of Co are sandwiched by localized 4$f$-electrons of $Ln^{3+}$, below…