Related papers: Transport and drag in undoped electron-hole bilaye…
We develop the microscopic theory of the extrinsic spin Hall conductivity of a two-dimensional electron gas, including skew-scattering, side-jump, and Coulomb interaction effects. We find that while the spin-Hall conductivity connected with…
We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms in this increasingly important materials…
Tunneling conductance between two bilayer graphene (BLG) sheets separated by 2 nm-thick insulating barrier was measured in two devices with the twist angles between BLGs less than 1{\deg}. At small bias voltages, the tunneling occurs with…
We theoretically study Coulomb drag between two helical edges with broken spin-rotational symmetry, such as would occur in two capacitively coupled quantum spin Hall insulators. For the helical edges, Coulomb drag is particularly…
Motivated by recent experimental findings, we study transport in a simple phenomenological model of a quantum Hall edge system with a gate-voltage controlled constriction lowering the local filling factor. The current backscattered from the…
Twisted double bilayer graphene is a compensated semi-metal near the charge neutrality point with the presence of small electron and hole pockets in its band structure. We show that strong Coulomb attraction between the electrons and holes…
We study electron transport through a semiconductor quantum ring with one input and two output terminals for an elastic scatterer present within one of the arms of the ring. We demonstrate that the scatterer not only introduces asymmetry in…
In twisted bilayer semiconductors with arbitrary twisting angles, a chiral excitonic system can arise from the interlayer electron-hole Coulomb exchange interaction (F\"{o}rster coupling) that hybridizes the anisotropic intralayer excitons…
We have studied ballistic transport in a 1D channel formed using surface gate techniques on a back-gated, high-mobility, bilayer 2D hole system. At millikelvin temperatures, robust conductance quantization is observed in the quantum wire…
We report low-temperature transport studies of parallel double quantum dots formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular patterns of Coulomb diamonds are observed in the charge stability diagrams, which we…
A theory of scattering by charged dislocation lines in a two-dimensional electron gas (2DEG) is developed. The theory is directed towards understanding transport in AlGaN/GaN high-electron-mobility transistors (HEMT), which have a large…
Superfluidity in coupled electron-hole sheets of bilayer graphene is predicted here to be multicomponent because of the conduction and valence bands. We investigate the superfluid crossover properties as functions of the tunable carrier…
Owing to their large effective mass, strong and tunable spin-orbit coupling, and complex band-structure, two-dimensional hole systems (2DHSs) in GaAs quantum wells provide rich platforms to probe exotic many-body physics, while also…
We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…
We report electron-hole conduction asymmetry in monolayer graphene. Previously, it has been claimed that electron-hole conduction asymmetry is due to imbalanced carrier injection from metallic electrodes. Here, we show that metallic…
The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al$_{1-x}$Ga$_{x}$Sb barriers are…
Coulomb drag experiments have been an essential tool to study strongly interacting low-dimensional systems. Historically, this effect has been explained in terms of momentum transfer between electrons in the active and the passive layer.…
The electrical transport properties of a bipolar InAs/GaSb system have been studied in magnetic field. The resistivity oscillates between insulating and metallic behaviour while the quantum Hall effect shows a digital character oscillating…
We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal…
Electron drag between two two-dimensional electron gases in magnetic fields has been observed with a polarity opposite that for zero field. This negative drag requires that the electrons have a hole-like dispersion. Density dependence…