Related papers: Recrystallization of epitaxial GaN under indentati…
A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off process did not require any special release layers in the…
We refine excitonic parameters of bulk GaN by means of time-of-flight spectroscopy of light pulses propagating through crystals. The influence of elastic photon scattering is excluded by using the multiple reflections of the pulses from…
Intermetallic binary compounds of europium reveal a variety of interesting phenomena due to the interconnection between two different magnetic and 4f electronic (valence) states, which are particularly close in energy. The valence states or…
As a viable candidate for an all-carbon post-CMOS electronics revolution, epitaxial graphene has attracted significant attention. To realize its application potential, reliable methods for fabricating large-area single-crystalline graphene…
We report on the electronic, structural, and optical properties of epitaxial GaSbBi films with varying Bi-concentration (up to 7%Bi) grown on semi-insulating GaAs(100) substrates. The 1 $\mu$m thick GaSbBi epilayers exhibit fully relaxed…
The potential of silicon nanowires (SiNWs), (diameter < 10 nm) to transform into rigid bundle-like structures with distinct phonon confinement under high pressure (<= 15 GPa), instead of amorphising as per previous reports, is demonstrated…
We report on the transport properties of clean, epitaxial Fe(Se,Te) thin films prepared on Fe-buffered MgO (001) single crystalline substrates by pulsed laser deposition. Near Tc a steep slope of the upper critical field for H||ab was…
Viscoelastic behavior in geological materials controls a wide range of geophysical phenomena, such as mantle convection. We present a new method for measuring attenuation in single crystals of minerals and in reference materials over a…
Ultrathin FeSe films grown on SrTiO$_{3}$ substrates are a recent milestone in atomic material engineering due to their important role in understanding unconventional superconductivity in Fe-based materials. Using femtosecond time- and…
We use inelastic light scattering to study Sr$_{1-x}$Na$_x$Fe$_2$As$_2$ ($x\approx0.34$), which exhibits a robust tetragonal magnetic phase that restores the four-fold rotation symmetry inside the orthorhombic magnetic phase. With cooling,…
Incorporation of $\mathrm{Al_{y}Ga_{1-y}N}$ (AGN) semiconductors into high power electronics offers efficiency improvements in power transmission, generation, and use, if approaches to eliminate the defects arising from film-lattice…
The early stages of epitaxial graphene layer growth on the Si-terminated 6H-SiC(0001) are investigated by Auger electron spectroscopy (AES) and depolarized Raman spectroscopy. The selection of the depolarized component of the scattered…
We propose a novel acoustic cavity design where we confine a mechanical mode by adiabatically changing the acoustic properties of a GaAs/AlAs superlattice. By means of high resolution Raman scattering measurements, we experimentally…
The prospect of GeSn semiconductors for silicon-integrated infrared optoelectronics brings new challenges related to the metastability of this class of materials. As a matter of fact, maintaining a reduced thermal budget throughout all…
We report a Raman scattering study of polycrystalline CaCu$_3$Ti$_4$O$_{12}$ (CCTO) under pressure up to 5.32 GPa. The pressure dependence of several Raman modes was investigated. No anomalies have been observed on the phonon spectra…
Compressively strained epitaxial (001) EuTiO3 thin films of tetragonal symmetry have been deposited on (001) (LaAlO3)_0.29-(SrAl_{1/2}Ta_{1/2}O3)_0.71 (LSAT) substrates by reactive molecular-beam epitaxy. Enhancement of the Neel temperature…
GaN(0001) surfaces with Ga- and H-adsorbates are fundamental stages for epitaxial growth of semiconductor thin films. We explore stable surface structures with nanometer scale by the density-functional calculations combined with Bayesian…
Phonon modes and their association with the electronic states have been investigated for the metallic EuCu$_{2}$As$_{2}$ system. In this work, we present the Raman spectra of this pnictide system which clearly shows the presence of seven…
Heteroepitaxy conventionally relies on rigid crystalline substrates, implicitly assuming that lattice and thermal mismatch must be accommodated within the epitaxial layer, leading to residual strain and defects that worsen with increasing…
We demonstrate high-frequency mechanical resonators in ballistic graphene p-n junctions. Fully suspended graphene devices with two bottom gates exhibit ballistic bipolar behavior after current annealing. We determine the graphene mass…