Related papers: Nanometer-scale sharpness in corner-overgrown hete…
Atomically flat semiconductor nanostructures have sharp photoluminescence emission, short radiative lifetimes and a well-defined planar structure. However, these nanostructures lack the optical and electronic fine-tuning that justify…
Ab initio calculations indicate that the ground state for Ga adsorption on Al (100) is on-surface with local unit coverage. On Ga-coated Al (100), the bridge diffusion barrier for Al is large, but the Al$\rightarrow$Ga {\it exchange barrier…
The use of highly efficient and solarblind GaN photocathodes as part of multichannel plate UV detectors for applications in astronomy would strongly benefit from the direct growth of GaN on typical window materials with high transmission…
Ternary and quaternary cubic c-AlxIn1-xN/GaN and c-AlxGayIn1-x-y/GaN heterostructures lattice-matched to c-GaN on freestanding 3C-SiC substrates were grown by plasma-assisted molecular beam epitaxy. The c-AlxGayIn1-x-y alloy permits the…
The configuration of graphene (GE) sheet conforming to the spherical surface substrate is studied through theoretical model and molecular simulations. Two basic configurations are observed: fully conformation and wrinkling. The final…
We suggest a new type of substrates for the Surface Enhanced Raman Scattering measurements with the geometry based on self-similar fractal space filling curves. As an example, we have studied theoretically the dielectric response properties…
The homogeneity of a large YBaCuO sample fabricated by top-seeded melt-growth has been studied in details. It was particularly shown how structural imperfections and superconducting properties are distributed along the growth front. These…
The initiation of intergranular corrosion at various types of grain boundaries (GBs) was studied at the nanometer scale on microcrystalline copper in 1 mM HCl aqueous solution. In situ Electrochemical Scanning Tunneling Microscopy (ECSTM)…
Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied…
We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growth without affecting the axial growth rate. In contrast, a…
Self-assembled GaN nanowires are typically grown on Si substrates with convenient nucleation layers. Light-emitting devices based on arrays of GaN nanowires require that the nucleation layer is electrically conductive and optically…
Self-assembled, semimetallic ErSb single crystal nanostructures, grown by molecular beam epitaxy, are embedded within a semiconductor GaSb matrix. Formation, evolution and orientation of a variety of nanostructures, including spherical…
This work presents some fundamental features of pyramidal site-controlled InGaAs Quantum Dots (QDs) grown by MetalOrganic Vapour Phase Epitaxy on patterned GaAs (111)B substrate. The dots self-form inside pyramidal recesses patterned on the…
Ultrathin two-dimensional nanosheets raise a rapidly increasing interest due to their unique dimensionality-dependent properties. Most of the two-dimensional materials are obtained by exfoliation of layered bulk materials or are grown on…
The two- to three-dimensional growth transition in the InAs/GaAs(001) heterostructure has been investigated by atomic force microscopy. The kinetics of the density of three dimensional quantum dots evidences two transition thresholds at…
The integrated inplane growth of two dimensional materials with similar lattices, but distinct electrical properties, could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge specific…
Nanographitic structures (NGSs) with multitude of morphological features are grown on SiO2/Si substrates by electron cyclotron resonance - plasma enhanced chemical vapor deposition (ECR-PECVD). CH4 is used as source gas with Ar and H2 as…
X-ray Absorption Near Edge Structure [XANES] of FePt nanoclusters has been studied using a full multiple scattering, self-consistent field [SCF], real-space Green`s function approach realized via the powerful ab initio FEFF8 code. One…
We report detailed shape measurements of the tips of three-dimensional ammonium chloride dendrites grown from supersaturated aqueous solution. For growth at small supersaturation, we compare two different models: parabolic with a…
Ge/Si(001) multilayer heterostructures containing arrays of low-temperature self-assembled Ge quantum dots and very thin Si$_x$Ge$_{1-x}$ layers of varying composition and complex geometry have been studied using Raman spectroscopy and…