Related papers: Electrical control of spin coherence in ZnO
We show electric field control of the spin accumulation at the interface of the oxide semiconductor Nb-SrTiO$_{3}$ with Co/AlO$_{x}$ spin injection contacts at room temperature. The in-plane spin lifetime $\tau_\parallel$ as well as the…
The ability to probe the spin properties of solid state systems electrically underlies a wide variety of emerging technology. Here, we extend electrical readout of the nuclear spin states of phosphorus donors in silicon to the coherent…
Electron spin dynamics are studied in Ga-doped ZnO single crystals by time-resolved Faraday and Kerr rotation spectroscopies. Long-lived spin coherence with two dephasing processes is discovered where the characteristic time is up to 5.2 ns…
The spin relaxation time of electrons in GaAs and GaN are determined with a model that includes momentum scattering by phonons and ionized impurities, and spin scattering by the Elliot-Yafet, D'yakonov-Perel, and Bir-Aronov-Pikus…
We experimentally demonstrate ultralong spin lifetimes of electrons in the one-dimensional (1D) quantum limit of semiconductor nanowires. Optically probing single wires of different diameters reveals an increase in the spin relaxation time…
During the past years there has been renewed interest in the wide-bandgap II-VI semiconductor ZnO, triggered by promising prospects for spintronic applications. First, ferromagnetism was predicted for dilute magnetic doping. In…
The effect of uniaxial tensile strain on spin coherence in n-type GaAs epilayers is probed using time-resolved Kerr rotation, photoluminescence, and optically-detected nuclear magnetic resonance spectroscopies. The bandgap, electron spin…
Mapping the physical dipolar Hamiltonian of a solid-state network of nuclear spins onto a system of nearest-neighbor couplings would be extremely useful for a variety of quantum information processing applications, as well as NMR structural…
The electron spin in a semiconductor quantum dot can be coherently controlled by an external electric field, an effect called electric-dipole spin resonance (EDSR). Several mechanisms can give rise to the EDSR effect, among which there is a…
The ability to extend the time scale of the coherent optical response from large ensembles of quantum emitters is highly appealing for applications in quantum information devices. In semiconductor nanostructures, spin degrees of freedom can…
Long coherence lifetimes of electron spins transported using moving potential dots are shown to result from the mesoscopic confinement of the spin vector. The confinement dimensions required for spin control are governed by the…
The finite spin lifetime in solids is often considered a major hindrance for the development of spintronic devices, which typically require cryogenic temperatures to mitigate this phenomenon. In this work we show that this feature can…
We used inelastic neutron scattering to show that well below its N\'{e}el temperature, $T_{\rm N}$, the two-dimensional (2D) XY nearly-triangular antiferromagnet YMnO$_{3}$ has a prominent {\it central peak} associated with 2D…
We have characterized CdS/CdSe/CdS quantum-dot quantum wells using time-resolved Faraday rotation (TRFR). The spin dynamics show that the electron g-factor varies as a function of quantum well width and the transverse spin lifetime of…
Optically addressable spins are actively investigated in quantum communication, processing and sensing. Optical and spin coherence lifetimes, which determine quantum operation fidelity and storage time, are often limited by spin-spin…
Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors,…
Electrical control of spins at the nanoscale offers significant architectural advantages in spintronics, because electric fields can be confined over shorter length scales than magnetic fields. Thus, recent demonstrations of electric-field…
We report a comprehensive study of stochastic electron spin fluctuations -- spin noise -- in lightly doped ($n$-type) bulk GaAs, which are measured using sensitive optical magnetometry based on off-resonant Faraday rotation. Frequency…
Time-resolved optical measurements of electron spin dynamics in modulation doped InGaAs quantum wells are used to explore electron spin coherence times and spin precession frequencies in a regime where an out of plane magnetic field…
Recently, we developed an \textit{ab initio} approach of spin lifetime (\tau_{s}) and spin diffusion length (l_{s}) in solids [Phys. Rev. Lett. 135, 046705 (2025)], based on a density-matrix master equation with quantum treatment of…