Related papers: Variable range hopping in thin film with large die…
For a system of localised electron states the DC conductivity vanishes at zero temperature, but localised electrons can conduct at finite temperature. Mott gave a theory for the low-temperature conductivity in terms of a variable-range…
Although consensus exists that the thermoelectric properties of doped organic semiconductors result from a complex interplay between a large number of mutually dependent factors, there is no consensus on which of these are dominant, or even…
The influence of external magnetic field $h$ on a static conductivity of Mott-Hubbard material which is described by model with correlated hopping of electrons has been investigated. By means of canonical transformation the effective…
Bulk single crystal Molybdenum diselenide has been studied for its electronic and thermal transport properties. We perform resistivity measurements with current in-plane (CIP) and current perpendicular to plane (CPP) as a function of…
Mott's variable range hopping (v.r.h.) is the phonon-induced hopping of electrons in disordered solids (such as doped semiconductors) within the regime of strong Anderson localization. It was introduced by N.~Mott to explain the anomalous…
We study the hopping conduction in a composite made of straight metallic nanowires randomly and isotropically suspended in an insulator. Uncontrolled donors and acceptors in the insulator lead to random charging of wires and hence finite…
We study Coulomb drag in a pair of parallel one-dimensional electron systems within the framework of the Tomanaga-Luttinger model. We find that Coulomb coupling has a much stronger effect on one dimensional wires than on two-dimensional…
In earlier work we showed that in the bulk, the correlation of gaps in dimer systems on the hexagonal lattice is governed, in the fine mesh limit, by Coulomb's law for 2D electrostatics. We also proved that the scaling limit of the discrete…
For the low-temperature electrical conductance of a disordered {\it quantum insulator} in $d$-dimensions, Mott \cite{mott} had proposed his Variable Range Hopping (VRH) formula, $G(T) = G_0 {\rm exp}[-(T_0/T)^{\gamma}]$, where $G_0$ is a…
The room temperature liquid metal related electronics has been found important in a wide variety of emerging areas over the past few years. However, its failure features under high electrical current densities are not clear until now. Here…
Mott variable range hopping is a fundamental mechanism for low-temperature electron conduction in disordered solids in the regime of Anderson localization. In a mean field approximation, it reduces to a random walk (shortly, Mott random…
In the ideal disorder-free situation, a two-dimensional band gap insulator has an activation energy for conductivity equal to half the band gap $\Delta$. But transport experiments usually exhibit a much smaller activation energy at low…
Thin films of topological insulators (TI) attract large attention because of expected topological effects from the inter-surface hybridization of Dirac points. However, these effects may be depleted by unexpectedly large energy smearing…
Variable-range hopping conductivity has long been understood in terms of a canonical prescription for relating the single-particle density of states to the temperature-dependent conductivity. Here we demonstrate that this prescription…
Computer modeling of the VRH conductivity in the two-dimensional system has been done by kinetic Monte Carlo method, which includes some new elements. Study of the temperature dependence of the conductivity, testing of the different scaling…
A model of charge hopping transport that accounts for anisotropy of localized states and Coulomb interaction between charges is proposed. For the anisotropic localized states the degree of orientation relates exponentially to the ratio of…
Magnetic field-driven domain wall motion in an ultrathin Pt/Co(0.45nm)/Pt ferromagnetic film with perpendicular anisotropy is studied over a wide temperature range. Three different pinning dependent dynamical regimes are clearly identified:…
We have studied the resistivity, $\rho$, of a two-dimensional electron system in silicon in the temperature range 200 mK < T < 7.5 K at zero magnetic field at low electron densities, when the electron system is in the insulating regime. Our…
We have conducted temperature and frequency dependent transport measurements in amorphous Nb_x Si_{1-x} samples in the insulating regime. We find a temperature dependent dc conductivity consistent with variable range hopping in a Coulomb…
We report on a study of Seebeck coefficient and resistivity in the quasi-one-dimensional conductor (TMTSF)$_{2}$PF$_{6}$ extended deep into the Spin-Density-Wave(SDW) state. The metal-insulator transition at $T_{SDW}$ = 12 K leads to a…