Related papers: Filling factor dependence of the fractional quantu…
Strongly correlated two-dimensional electronic systems subject to a perpendicular magnetic field at lowest Landau level (LLL) filling factors: 1/2, 1/4 and 1/6 are believed to be composite fermion (CF) Fermi liquid phases. Even though a…
We calculate the tunneling density of states of a two-dimensional interacting electron gas in a quantizing magnetic field. We show that the observed pseudogap in the density of states can be understood as the result of an infrared…
Helical trilayer graphene realizes a versatile moir\'e system for exploring correlated topological states emerging from high Chern bands. Motivated by recent experimental observations of anomalous Hall effects at fractional fillings of…
We have measured the effective mass ($m^*$) of the four flux composite fermion at Landau level filling factor $\nu = 1/4$ ($^4$CF), using the activation energy gaps at the fractional quantum Hall effect (FQHE) states $\nu$ = 2/7, 3/11, and…
In two-dimensional (2D) electron systems under strong magnetic fields, interactions can cause fractional quantum Hall (FQH) effects. Bringing two 2D conductors to proximity, a new set of correlated states can emerge due to interactions…
We investigate a gapped two-dimensional nodal-line semimetal subjected to a perpendicular magnetic field. We identify an unusual pattern for Landau levels, where the energy of Landau levels first decreases and then starts increasing versus…
We report the evolution of the fractional quantum Hall state (FQHS) at even-denominator filling factor $\nu=7/2$ in wide GaAs quantum wells in which electrons occupy two electric subbands. The data reveal subtle and distinct evolutions as a…
Magnetic field suppression of the tunneling between disordered 2D electron systems in GaAs around zero bias voltage has been studied. Magnetic field B normal to the layers induces a dip in the tunneling density of states (TDOS) centered…
Due to its extremely rich phase diagram, the two-dimensional electron gas exposed to perpendicular magnetic field has been the subject of intense and sustained study. One particularly interesting problem in this system is that of the…
Experimental studies of the antiferromagnetic (AF) heavy fermion metal $\rm YbRh_2Si_2$ in a magnetic field $B$ indicate the presence of a jump in the Hall coefficient at a magnetic-field tuned quantum state in the zero temperature limit.…
Composite fermions (CFs), exotic quasi-particles formed by pairing an electron and an even number of magnetic flux quanta emerge at high magnetic fields in an interacting electron system, and can explain phenomena such as the fractional…
The model of Composite Fermions for describing interacting electrons in two dimensions in the presence of a magnetic field is described. In this model, charged Fermions are combined with an even number of magnetic flux quanta in such a way…
The resistivity $\rho$ of high mobility dilute 2D holes in GaAs exhibits a peak at a certain temperature $T^*$ in zero magnetic field($B$=0). In the $T>T^*$ regime where d$\rho$/d$T<$0, we observe for the first time both the $\nu=1$ quantum…
We investigate non-linear magneto-transport in a Hall bar device made from a strained InGaAs/InP quantum well: a material system with attractive spintronic properties. From extensive maps of the longitudinal differential resistance (r_xx)…
We consider a non-Abelian candidate state at filling factor $\nu=3/7$ state belonging to the parton family. We find that, in the second Landau level of GaAs (i.e. at filling factor $\nu=2+3/7$), this state is energetically superior to the…
An exact incompressible quantum liquid is constructed at the filling factor $1/m^2$ in square lattice. It supports deconfined fractionally charged excitation. At the filling factor $1/m^2$, the excitation has fractional charge $\pm e/m^2$,…
The fractional quantum Hall (FQH) effect at the filling factor $\nu=5/2$ was discovered in GaAs heterostructures more than 35 years ago. Various topological orders have been proposed as possible candidates to describe this FQH state. Some…
We study the problem of resonant tunneling between a Fermi liquid and the edge of a $\nu=1/3$ fractional quantum Hall state. In the limit of weak coupling, the system is adequately described within the sequential tunneling approximation. At…
We report the observation of a new phenomenon of colossal magnetoresistance in a 40 nm wide GaAs quantum well in the presence of an external magnetic field applied parallel to the high-mobility 2D electron layer. In a strong magnetic field,…
We report low temperature magnetotransport measurements on a high mobility (\mu=325,000 cm^2/V sec) 2D electron system on a H-terminated Si(111) surface. While low magnetic field data indicate a six-fold valley degenerate system, we observe…