Related papers: Dielectric constant boost in amorphous sesquioxide…
The quantum phase transition between the three dimensional Dirac semimetal and the diffusive metal can be induced by increasing disorder. Taking the system of disordered $\mathbb{Z}_2$ topological insulator as an important example, we…
Experimentally, it is known that lithium undergoes a metal to semiconductor transition at about 80 GPA and a reentrant semiconductor to metal transition near 120 GPA. This unusual behaviour has been attributed to the formation of…
As an anode material for lithium-ion batteries, amorphous silicon offers a significantly higher energy density than the graphite anodes currently used. Alloying reactions of lithium and silicon, however, induce large deformation and lead to…
Al/ maleic anhydride (MA) /p-Si organic Schottky devices were fabricated on a p-Si semiconductor wafer by spin coating. The frequency and voltage dependent dielectric constant of Al/MA/p-Si have been investigated. Dielectric properties and…
The dielectric response and structural properties of finite-temperature electron liquids are central to accurately describing the physical behavior of electronic systems. This study presents a robust analytical model for the static…
Electrochemical capacitors with pure electric double layer capacitance are so far largely been limited to carbon materials only. Conventional metal oxides with Faradaic pseudocapacitance substantially suffer from material instability at…
Composites of the type: metal - dielectrics and superconductor - dielectrics are studied in the quasistatic approximation. The dielectric response is described by the spectral function $G(n,x)$, which contains effects of the concentration x…
Oxide interfaces feature unique two-dimensional (2D) electronic systems with diverse electronic properties such as tunable spin-orbit interaction and superconductivity. Conductivity emerges in these interfaces when the thickness of an…
A 2D electron gas system in an oxide heterostructure serves as an important playground for novel phenomena. Here, we show that, by using fractional delta-doping to control the interface's composition in LaxSr1-xTiO3/SrTiO3 artificial oxide…
In ABO3 perovskites, oxygen octahedron rotations are common structural distortions that can promote large ferroelectricity in BiFeO3 with an R3c structure [1], but suppress ferroelectricity in CaTiO3 with a Pbnm symmetry [2]. For many…
Monte Carlo simulations, supplemented by ab initio calculations, shed light into the energetics and thermodynamic stability of nanostructured amorphous carbon. The interaction of the embedded nanocrystals with the host amorphous matrix is…
We report on broadband dielectric spectroscopy on the one-dimensional semiconductor (NbSe4)3I. Below the structural phase transition close to 270 K we observe colossal dielectric constants with a frequency and temperature dependence very…
The significance of a negative dielectric constant has long been recognized. We report here the observation of a field-induced large negative dielectric constant of aggregates of oxide nano-particles at frequencies below ~ 1 Hz at room…
Relaxor ferrolectrics are important in technological applications due to a strong electromechanical response, energy storage capacity, electrocaloric effect, and pyroelectric energy conversion properties. Current efforts to discover and…
The dielectric enhancement and modulation of a cuprous oxide (Cu2O) microwave-active catalyst material is investigated from an experimental and computational point of view. Experimental synthesis of two particle morphologies that included a…
Experimental evidence is provided that colossal dielectric constants, epsilon >= 1000, sometimes reported to exist in a broad temperature range, can often be explained by Maxwell-Wagner type contributions of depletion layers at the…
We investigate band gaps, equilibrium structures, and phase stabilities of several bulk polymorphs of wide-gap oxide semiconductors ZnO, TiO2,ZrO2, and WO3. We are particularly concerned with assessing the performance of hybrid functionals…
The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga$_2$O$_3$ has emerged as an alternative to SiC and GaN, sparking a renewed interest in its…
Motivated by recent experiments showing over $10^4$-fold increase in induced polarization from electrochemically inert, conducting materials in dilute saline solutions, we theoretically demonstrate a new mechanism for dielectric…
The compounds exhibit piezoelectricity, which demands to break inversion symmetry, and then to be a semiconductor. For $\mathrm{Ga_2O_3}$, the orthorhombic case ($\epsilon$-$\mathrm{Ga_2O_3}$) of common five phases breaks inversion…