Related papers: Multiple Quantum Well AlGaAs Nanowires

GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such…

Control over spontaneous emission rate is important for improving efficiency in different semiconductor applications including lasers, LEDs and photovoltaics. Usually, an emitter should be placed inside the cavity to increase spontaneous…

Terahertz photoconductivity of $100~\mu$m and $20~\mu$m Hall bars fabricated from narrow AlAs quantum wells (QWs) of different widths is investigated in this paper. The photoresponse is dominated by collective magnetoplasmon excitations…

We measured resonant Raman scattering by intersubband electronic excitations in GaAs/AlAs single quantum wells (QWs) with well widths ranging from 8.5 to 18 nm. In narrow (less than 10 nm) QWs with sufficiently high electron concentrations,…

We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al$_{0.3}$Ga$_{0.7}$As barrier into the GaAs buffer layer of a standard modulation-doped…

Achieving significant doping in GaAs/AlAs core/shell nanowires (NWs) is of considerable technological importance but remains a challenge due to the amphoteric behavior of the dopant atoms. Here we show that placing a narrow GaAs quantum…

We report transport mobility measurements for clean, two-dimensional (2D) electron systems confined to GaAs quantum wells (QWs), grown via molecular beam epitaxy, in two families of structures, a standard, symmetrically-doped GaAs set of…

The quantum well solar cell (QWSC) is a p - i - n solar cell with quantum wells in the intrinsic region. Previous work has shown that QWSCs have a greater open circuit voltage (Voc) than would be provided by a cell with the quantum well…

We present the combined analysis of the electroluminescence (EL) as well as the current-voltage (I-V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown…

Superconducting resonators integrated with Ge quantum wells (QWs) offer a promising platform for hybrid quantum devices. Yet, in the most common heterostructure architectures, they have so far been limited by sizable photon losses. Here, we…

InAs nanowires were grown on GaAs substrates by the Au-assisted vapour-liquid-solid (VLS) method in a gas source molecular beam epitaxy (GS-MBE) system. Passivation of the InAs nanowires using InP shells proved difficult due to the tendency…

This review focuses on the investigation and enhancement of the thermoelectric properties of semiconducting nanowires (NWs). NWs are nanostructures with typical diameters between few to hundreds of nm and length of few to several microns,…

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a novel flip chip…

The enhancement of power conversion efficiency beyond the theoretical limit of single-junction solar cells is a key objective in the advancement of hot carrier solar cells. Recent findings indicate that quantum wells (QWs) can effectively…

We present a systematic theoretical study of the multi-photon nonlinear optical absorption properties of a $\text{GaAs/A}{{\text{l}}_{x}}\text{G}{{\text{a}}_{1-x}}\text{As}$ based quantum well (QW) structure with Morse confinement potential…

Quantum-dot-in-nanowire systems constitute building blocks for advanced photonics and sensing applications. The electronic symmetry of the emitters impacts their function capabilities. Here, we study the fine structure of gallium-rich…

We recently demonstrated orders of magnitude enhancement of two-photon absorption (2PA) in direct gap semiconductors due to intermediate state resonance enhancement for photons of very different energies. It can be expected that further…

The exploration of photonic systems for quantum information processing has generated widespread interest in multiple cutting-edge research fields. Photonic frequency encoding stands out as an especially viable approach, given its natural…

We describe the growth of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on (110) GaAs substrates. Unlike the well-known protocol for the epitaxy of ZnSe-based quantum structures on (001) GaAs, we find that the fabrication of quantum well…

We present a study of the photoluminescence (PL) properties of heavily Be delta-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed,…