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Related papers: Spin transfer torques in magnetic tunnel junctions

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We formulate a theory of current-induced spin torques in inhomogeneous III-V ferromagnetic semiconductors. The carrier spin-3/2 and large spin-orbit interaction, leading to spin non-conservation, introduce significant conceptual differences…

Other Condensed Matter · Physics 2015-05-13 Dimitrie Culcer , M. E. Lucassen , R. A. Duine , R. Winkler

Current-induced torques on ferromagnetic nanoparticles and on domain walls in ferromagnetic nanowires are normally understood in terms of transfer of conserved spin angular momentum between spin-polarized currents and the magnetic…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 P. M. Haney , R. A. Duine , A. S. Nunez , A. H. MacDonald

We consider theoretically a current flowing perpendicular to interfaces of a spin-valve type ferromagnetic metallic junction. For the first time an effective approach is investigated to calculate a simultaneous action of the two current…

Materials Science · Physics 2009-11-11 R. J. Elliott , E. M. Epshtein , Yu. V. Gulyaev , P. E. Zilberman

We use a previously proposed theory for the temperature dependence of tunneling magnetoresistance to shed light on ongoing efforts to optimize spin valves. First we show that a mechanism in which spin valve performance at finite…

Mesoscale and Nanoscale Physics · Physics 2014-09-11 Karin Everschor-Sitte , Matthias Sitte , Allan H. MacDonald

Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…

Joint influence of two effects, namely, nonequilibrium spin injection by current, and current induced surface torque, on spin-valve type ferromagnetic metallic junctions is considered theoretically. The CPP configuration is assumed. The…

Materials Science · Physics 2007-05-23 R. J. Elliott , E. M. Epshtein , Yu. V. Gulyaev , P. E. Zilberman

Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…

Materials Science · Physics 2015-03-13 M. Carpentieri , R. Tomasello , M. Ricci , P. Burrascano , G. Finocchio

We theoretically examine the spin-transfer torque in the presence of spin-orbit interaction (SOI) at impurities in a ferromagnetic metal on the basis of linear response theory. We obtained, in addition to the usual spin-transfer torque, a…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 Junya Shibata , Hiroshi Kohno

Recent progress in physics on spin dependent transport in magnetic nanostructures is reviewed. Special attention is paid on the spin accumulation and spin current caused by spin injection into non-magnetic metals and semiconductors and…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 S. Maekawa

We have fabricated nanoscale magnetic tunnel junctions (MTJs) with an additional fixed magnetic layer added above the magnetic free layer of a standard MTJ structure. This acts as a second source of spin-polarized electrons that, depending…

We develop a comprehensive description of static and dynamic spin-transfer torque at interfaces between a normal metal and a magnetic material. Specific examples of the latter include ferromagnets, collinear and noncollinear…

Mesoscale and Nanoscale Physics · Physics 2017-09-13 Yaroslav Tserkovnyak , Hector Ochoa

Tunneling Magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal…

Mesoscale and Nanoscale Physics · Physics 2016-02-09 Zhongbo Yan , Shaolong Wan

We report on first-principles calculations of spin-transfer torque (STT) in epitaxial magnetic tunnel junctions (MTJs) based on ferrimagnetic tetragonal Mn$_3$Ga electrodes, both as analyzer in an Fe/MgO stack, and also in an analogous…

Mesoscale and Nanoscale Physics · Physics 2022-01-10 Maria Stamenova , Plamen Stamenov , Farzad Mahfouzi , Quilong Sun , Nicholas Kioussis , Stefano Sanvito

Pulsed spin-torque switching has been studied using single-shot time-resolved electrical measurements in perpendicularly magnetized magnetic tunnel junctions as a function of pulse amplitude and junction size in 50 to 100 nm diameter…

Mesoscale and Nanoscale Physics · Physics 2017-01-04 Christian Hahn , Georg Wolf , Bartek Kardasz , Steve Watts , Mustafa Pinarbasi , Andrew D. Kent

Current-induced magnetization switching, a fundamental phenomenon related to spin-transport of electrons, enables non-voltaic and fast information write, facilitating applications in low-power memory and logic devices. However,…

Materials Science · Physics 2025-07-30 Yanyan Yang , Weiwei Lin

Using one of the methods of quantum nonequilibrium statistical physics we have investigated the spin transport transverse to the normal metal/ferromagnetic insulator interface in hybrid nanostructures. An approximation of the effective…

Mesoscale and Nanoscale Physics · Physics 2015-06-11 I. I. Lyapilin , M. S. Okorokov , V. V. Ustinov

We predict an anomalous bias dependence of the spin transfer torque parallel to interface, $T_{||}$, in magnetic tunnel junctions (MTJ), which can be selectively tuned by the exchange splitting. It may exhibit a sign reversal {\it without}…

Other Condensed Matter · Physics 2007-05-23 Ioannis Theodonis , Nicholas Kioussis , Alan Kalitsov , Mairbek Chshiev , William Butler

We examine a modified drift-diffusion formalism to describe spin transport near an ultrathin magnet whose thickness is similar to or less than the spin dephasing length. Most of the previous theories on spin torque assume the transverse…

Mesoscale and Nanoscale Physics · Physics 2019-06-19 Kyoung-Whan Kim

We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and the read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a…

The electron tunneling in half metallic manganite tunnel junctions is studied by using a quantum mechanically treated double exchange model. We show that the stimulation of spin excitations, caused by the strong Hund's coupling between the…

Condensed Matter · Physics 2009-11-07 R. Y. Gu , L. Sheng , C. S. Ting
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