Related papers: Nonlinear ac conductivity of one-dimensional Mott …
Numerical calculations of anisotropic hopping transport based on the resistor network model are presented. Conductivity is shown to follow the stretched exponential dependence on temperature with exponents changing from 1/4 to 1 as the wave…
The main purpose of this paper is to holographically study the behavior of conductivity in 2+1 dimensional disordered systems. We analyze probe D-brane systems in AdS/CFT with random closed string and open string background fields. We give…
We consider theoretically nonlinear effects in a semiconductor quantum well embedded inside a photonic microcavity. Two-photon absorption by a 2p exciton state is considered and investigated; the matrix element of two-photon absorption is…
A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and…
Motivated by the recent discovery of a low temperature spin liquid phase in layered organic compound $\kappa$-(ET)$_2$Cu$_2$(CN)$_3$ which becomes a superconductor under pressure, we examine the phase transition of Mott insulating and…
Spin-charge separation is known to be broken in many physically interesting one-dimensional (1D) and quasi-1D systems with spin-orbit interaction because of which spin and charge degrees of freedom are mixed in collective excitations. Mixed…
We show that an Anderson Hamiltonian describing a quantum dot connected to multiple leads is integrable. A general expression for the non-linear conductance is obtained by combining the Bethe ansatz exact solution with Landauer-B\"uttiker…
We develop a practical first-principles methodology to determine nonradiative carrier capture coefficients at defects in semiconductors. We consider transitions that occur via multiphonon emission. Parameters in the theory, including…
We consider a Hubbard model on a square lattice with an additional interaction, $W$, which depends upon the square of a near-neighbor hopping. At half-filling and a constant value of the Hubbard repulsion, increasing the strength of the…
Photo-induced metallic states in a Mott insulator are studied for the half-filled, one-dimensional Hubbard model with the time-dependent density matrix renormalization group. An irradiation of strong AC field is found to create a linear…
The Mott insulating phase of a one-dimensional bosonic gas trapped in optical lattices is described by a Bose-Hubbard model. A continuous unitary transformation is used to map this model onto an effective model conserving the number of…
Mott insulator to metal transitions under electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves non-trivial out-of-equilibrium effects in correlated systems, is indeed at…
Interacting lattice bosons at integer filling can support two distinct insulating phases, which are separated by a critical point: the Mott insulator and the Haldane insulator[Phys. Rev. Lett. 97, 260401 (2006)]. The critical point can be…
The application of two-dimensional (2D) semiconductors, such as monolayer MoS2, is limited by the high contact resistance commonly attributed to interfacial barriers at metal contacts. Furthermore, the dependence of electrical conductivity…
We investigate the resonant two-magnon Raman scattering in the two-dimensional (2D) and ladder-type Mott insulators by using a half-filled Hubbard model in the strong coupling limit. By performing numerical diagonalization calculations for…
We investigate the nonlinear current-voltage characteristic of mesoscopic conductors and the current generated through rectification of an alternating external bias. To leading order in applied voltages both the nonlinear and the rectified…
Coulomb blockade in a quantum dot attached to a diffusive conductor is considered in the framework of the non-linear sigma-model. It is shown that the weak charge quantization on the dot is associated with instanton configurations of the…
We study the charge dynamics of the half-filled Hubbard model on the square lattice at zero temperature. We employ a slave-fermion formulation in which the charge degrees of freedom are represented by fermionic holons and doublons and the…
Nonlinear electrical response permits a unique window into effects of band structure geometry. It can be calculated either starting from a Boltzmann approach for small frequencies, or using Kubo's formula for resonances at finite frequency.…
The physical nature of doped Mott-insulator has been intensively studied for more than three decades. It is well known that the single band Hubbard model or $t$-$J$ model on the bipartite lattice is the simplest model to describe a doped…