Related papers: Electronic spin drift in graphene field effect tra…
The optical conductivity of graphite in quantizing magnetic fields is analytically evaluated for frequencies in the range of 10--300 meV, where the electron relaxation processes can be neglected and the low-energy excitations at the "Dirac…
Graphene is a 2-dimensional material with high carrier mobility and thermal conductivity, suitable for high-speed electronics. Conduction and valence bands touch at the Dirac point. The absorptivity of single-layer graphene is 2.3%, nearly…
Using first-principles calculations, the effect of magnetic point defects (vacancy and adatom) is investigated in zigzag graphene nanoribbons. The structural, electronic, and spin-transport properties are studied. While pristine ribbons…
In a ferromagnet/superconductor/ferromagnet (F/S/F) superconducting spin-valve (SSV), a change of the magnetization alignment of the two F layers modulates the critical temperature (Tc) of the S layer. The Tc-switching (the SSV effect) is…
At near-parallel orientation, twisted bilayer of transition metal dichalcogenides exhibit inter-layer charge transfer-driven out-of-plane ferroelectricity that may lead to unique electronic device architectures. Here we report detailed…
Space- and time-resolved measurements of spin drift and diffusion are performed on a GaAs-hosted two-dimensional electron gas. For spins where forward drift is compensated by backward diffusion, we find a precession frequency in absence of…
We consider properties of a two-dimensional electron system in a random magnetic field. It is assumed that the magnetic field not only influences orbital electron motion but also acts on the electron spin. For calculations, we suggest a new…
We study the transmission probability of Dirac fermions in graphene scattered by a triangular double barrier potential in the presence of an external magnetic field. Our system made of two triangular potential barrier regions separated by a…
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal…
We investigate the effects of uniaxial strain on the transport properties of vertical devices made of two twisted graphene layers, which partially overlap each other. We find that because of the different orientations of the two graphene…
The magneto-conductivity of a single graphene layer where the electrons are described by the Dirac Hamiltonian weakly modulated by a periodic potential is calculated. It is shown that Weiss oscillations periodic in the inverse magnetic…
Two-dimensional electrons in graphene are known to behave as massless fermions with Dirac-Weyl type linear dispersion near the Dirac crossing points. We have investigated the collective excitations of this system in the presence or absence…
The coupling of charge carrier motion and pseudospin via chirality for massless Dirac fermions in monolayer graphene has generated dramatic consequences, such as the unusual quantum Hall effect and Klein tunneling. In bilayer graphene,…
Proximity orbital and spin-orbital effects of graphene on monolayer transition-metal dichalcogenides (TMDCs) are investigated from first-principles. The Dirac band structure of graphene is found to lie within the semiconducting gap of TMDCs…
We propose spin valves where a 2D non-magnetic conductor is intercalated between two ferromagnetic insulating layers. In this setup, the relative orientation of the magnetizations of the insulating layers can have a strong impact on the…
We report an observation of spin-valve like hysteresis within a few atomic layers at a ferromagnetic interface. We use phonon spectroscopy of nanometer sized point contacts as an in-situ probe to study the mechanism of the effect. Distinct…
The electric drift current bias was recently introduced as a new paradigm to break the Lorentz reciprocity in graphene. Here, we study the impact of the nonreciprocal response in the energy extracted from a beam of swift charges travelling…
Electronic analogue of generalized Goos-H\"{a}nchen shifts is investigated in the monolayer graphene superlattice with one-dimensional periodic potentials of square barriers. It is found that the lateral shifts for the electron beam…
A semiclassical Monte Carlo approach is adopted to study the multivalley spin depolarization of drifting electrons in a doped n-type GaAs bulk semiconductor, in a wide range of lattice temperature ($40<T_L<300$ K) and doping density…
Gate-tunable spin-dependent properties could be induced in graphene at room temperature through magnetic proximity effect by placing it in contact with a metallic ferromagnet. Because strong chemical bonding with the metallic substrate…