Related papers: Electronic spin drift in graphene field effect tra…
We study single electron transport through a graphene quantum dot with magnetic adsorbates. We focus on the relation between the spin order of the adsorbates and the linear conductance of the device. The electronic structure of the graphene…
Electron transport through the Corbino disk in graphene is studied in the presence of uniform magnetic fields. At the Dirac point, we observe conductance oscillations with the flux piercing the disk area $\Phi_d$, characterized by the…
The temperature dependence of the spin relaxation time in multilayer graphene (MLG) spin valve devices was measured using a non-local magnetoresistance (NLMR) measurement. A weak localization (WL) was observed from magnetoresistance (MR)…
We present a theory of the current-voltage characteristics of a magnetic domain wall between two highly spin-polarized materials, which takes into account the effect of the electrical bias on the spin-flip probability of an electron…
Using a three-dimensional focused-ion beam lithography process we have fabricated nanopillar devices which show spin transfer torque switching at zero external magnetic fields. Under a small in-plane external bias field, a field-dependent…
The intrinsic spin and valley Hall conductivities of silicene, germanene and other similar two dimensional crystals are explored theoretically. Particular attention is given to the effects of the intrinsic spin-orbit coupling, electron…
Theoretical investigation of Dirac electrons in electrically modulated graphene under perpendicular magnetic field B is presented. We have carried out a detailed study of modulation effect on Dirac electrons, which determine its electrical…
We study the spin exchange between two electrons localized in separate quantum dots in graphene. The electronic states in the conduction band are coupled indirectly by tunneling to a common continuum of delocalized states in the valence…
We present a theory of electronic transport in graphene in the presence of randomly placed adsorbates. Our analysis predicts a marked asymmetry of the conductivity about the Dirac point, as well as a negative weak-localization…
Monolayer graphene with an energy gap presents a pseudospin symmetry broken ferromagnet with a perpendicular pseudomagnetization whose direction is switched by altering the type of doping between n and p. We demonstrate an electrical…
In this work, we theoretically investigate the spin-Peltier effect in a heterostructure composed of graphene and a ferromagnetic insulator (FI). Using a microscopic formalism based on the characteristic spin-flip scattering length at the…
Using simultaneous magnetic force microscopy (MFM) and transport measurements of a graphene spin valve, we correlate the non-local spin signal with the magnetization of the device electrodes. The imaged magnetization states corroborate the…
We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts…
We review the transmission of Dirac electrons through a potential barrier in the presence of circularly polarized light. A different type of transmission is demonstrated and explained. Perfect transmission for nearly head-on collision in…
We have investigated electrical transport and shot noise in graphene field effect devices. In large width over length ratio $W/L$ graphene strips, we have measured shot noise at low frequency ($f$ = 600--850 MHz) in the temperature range of…
The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptionally long spin relaxation lengths make graphene an intriguing…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
Electron beam exposure is a commonly used tool for fabricating and imaging graphene-based devices. Here we present a study of the effects of electron-beam irradiation on the electronic transport properties of graphene and the operation of…
Keldysh nonequilibrium Green's function method is utilized to study theoretically the spin polarized transport through a graphene spin valve irradiated by a monochromatic laser field. It is found that the bias dependence of the differential…
We report on first-principles calculations of spin-dependent properties in graphene induced by its interaction with a nearby magnetic insulator (Europium oxide, EuO). The magnetic proximity effect results in spin polarization of graphene…