Related papers: Electronic spin drift in graphene field effect tra…
The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized…
Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room…
Spin transport experiments in graphene, a single layer of carbon atoms, indicate spin relaxation times that are significantly shorter than the theoretical predictions. We investigate experimentally whether these short spin relaxation times…
We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect…
A spin field effect transistor (FET) is proposed by utilizing a graphene nanoribbon as the channel. Similar to the conventional spin FETs, the device involves ferromagnetic metals as a source and drain; they, in turn, are connected to the…
Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic-material to complement- or replace- silicon. At the same time, the…
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…
Graphene - a single atomic layer of graphite - is a recently-found two-dimensional form of carbon, which exhibits high crystal quality and ballistic electron transport at room temperature. Soft magnetic NiFe electrodes have been used to…
We present a theoretical study on the spin-dependent transport through a spin valve consisting of graphene sandwiched between two magnetic leads with an arbitrary orientation of the lead magnetization. No gate voltage is applied. Using…
We investigate spin transport by thermally excited spin waves in an antiferromagnetic insulator. Starting from a stochastic Landau-Lifshitz-Gilbert phenomenology, we obtain the out-of-equilibrium spin-wave properties. In linear response to…
We fabricated a non-local spin valve device with Co-MgO injector/detector tunnel contacts on a graphene spin channel. In this device, the spin polarization of the injector contact can be tuned by both the injector current bias and the gate…
We investigate spin transport through ferromagnetic graphene vertical heterostructures where a sandwiched tunneling layer is either a normal or ferroelectric insulator. We show that the spin-polarization of the tunneling current is…
van der Waals heterostructures assembled from atomically thin crystals are ideal model systems to study spin-orbital coupled transport because they exhibit a strong interplay between spin, lattice and valley degrees of freedom that can be…
We study the spin transport phenomena in two-dimensional graphene-like materials with arbitrary tilted Dirac cones. The tilt arises due to next-nearest hopping when the bottom of the conduction band and top of the valence band does not…
A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…
Spin accumulation and spin precession in single-layer graphene are studied by non-local spin valve measurements at room temperature. The dependence of the non-local magnetoresistance on electrode spacing is investigated and the results…
Based on the time-dependent nonequilibrium Green's function method we investigate theoretically the time and spin-dependent transport through a graphene layer upon the application of a static bias voltage to the electrodes and a…
Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the non-local geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle…
Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin…
We suggest that by applying a magnetic field lying in the plane of graphene layer one may facilitate an excitonic condensation of electron-hole pairs with opposite spins and chiralities. The provided calculations yield a conservative…