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Phase decomposition is a well-known process leading to the formation of two-phase mixtures. Here we show that a strain imposed on a ferroelastic crystal promotes the formation of mixed phases and domains, i.e., domain and phase de-strain…

Materials Science · Physics 2016-12-21 Fei Xue , Yongjun Li , Yijia Gu , Jinxing Zhang , Long-Qing Chen

We studied the phase diagram of thin ferroelectric films with incommensurate phases and semiconductor properties within the framework of Landau-Ginzburg-Devonshire theory. We performed both analytical calculations and phase-field modelling…

Ferroelectric HfO2 films are usually polycrystalline and contain a mixture of polar and nonpolar phases. This challenges the understanding and control of polar phase stabilization and ferroelectric properties. Several factors such as…

Materials Science · Physics 2023-12-14 Tingfeng Song , Veniero Lenzi , José P. B. Silva , Luís Marques , Ignasi Fina , Florencio Sánchez

Layered materials with non-centrosymmetric stacking order are attracting increasing interest due to the presence of ferroelectric polarization, which is dictated by weak interlayer hybridization of atomic orbitals. Here, we use density…

Mesoscale and Nanoscale Physics · Physics 2025-01-15 Xue Li , James G. McHugh , Vladimir I. Falko

In this paper we study the size effects of the ferroelectric nanotube phase diagrams and polar properties allowing for effective surface tension and depolarization field influence. The approximate analytical expression for the…

Materials Science · Physics 2007-05-23 A. N. Morozovska , M. D. Glinchuk , E. A. Eliseev

Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. N\'eel-,…

Ferroelectric hafnium oxide (${HfO_2}$) exhibits a thickness-dependent coercive field $(E_c)$ behavior that deviates from the trends observed in perovskites and the predictions of Janovec-Kay-Dunn (JKD) theory. Experiments reveal that, in…

Materials Science · Physics 2025-06-09 Revanth Koduru , Sumeet Kumar Gupta

Optical excitation perturbs the balance of phenomena selecting the tilt orientation of domain walls within ferroelectric thin films. The high carrier density induced in a low-strain BaTiO3 thin film by an above-bandgap ultrafast optical…

Complex strain status can exist in 2D materials during their synthesis process, resulting in significant impacts on the physical and chemical properties. Despite their prevalence in experiments, their influence on the material properties…

Materials Science · Physics 2023-08-23 Dongyu Bai , Yihan Nie , Jing Shang , Minghao Liu , Yang Yang , Haifei Zhan , Liangzhi Kou , Yuantong Gu

We report two series of structures representing two types of $180^\circ$ ferroelectric domain walls in $\mathrm{HfO_2}$ and $\mathrm{ZrO_2}$. We model the domain structures with different width by density functional theory calculations. The…

Materials Science · Physics 2022-02-22 Hongchu Du

We present experimental evidence for hexagonal domain faceting in the ferroelectric polymer PVDF-TrFE films having the lower orthorhombic crystallographic symmetry. This effect can arise from purely electrostatic depolarizing forces. We…

Materials Science · Physics 2015-06-17 I. Lukyanchuk , P. Sharma , T. Nakajima , S. Okamura , J. F. Scott , A. Gruverman

Electrochemical phenomena in ferroelectrics are of particular interest for catalysis and sensing applications, with recent studies highlighting the combined role of the ferroelectric polarisation, applied surface voltage and overall…

Domain structures play a crucial role in the electric, mechanical and other properties of ferroelectric materials. In this study, we uncover the physical origins of the enigmatic zigzag domain structure in the prototypical multiferroic…

Density functional calculations are performed to study the effect of epitaxial strain on PbZrO3. We find a remarkably small energy difference between the epitaxially strained polar R3c and nonpolar Pbam structures over the full range of…

Materials Science · Physics 2014-05-15 Sebastian E. Reyes-Lillo , Karin M. Rabe

We explore the impact of a magnetic field on the ferroelectric domain pattern in polycrystalline hexagonal ErMnO3 at cryogenic temperatures. Utilizing piezoelectric force microscopy measurements at 1.65 K, we observe modifications of the…

Materials Science · Physics 2024-03-21 J. Schultheiß , L. Puntigam , M. Winkler , S. Krohns , D. Meier , H. Das , D. M. Evans , I. Kézsmárki

The switching characteristics of ferroelectrics and multiferroics are influenced by the interaction of topological defects with domain-walls. We report on the pinning of polarization due to antiphase boundaries in thin films of the…

Materials Science · Physics 2024-12-04 Guodong Ren , Pravan Omprakash , Xin Li , Yu Yun , Arashdeep S. Thind , Xiaoshan Xu , Rohan Mishra

The surface charge associated with the spontaneous polarization in ferroelectrics is well known to cause a depolarizing field that can be particularly detrimental in the thin-film geometry desirable for microelectronic devices. Incomplete…

Materials Science · Physics 2021-09-10 Chiara Gattinoni , Nicola A. Spaldin

The influence of flexoelectric coupling on the internal structure of neutral domain walls in tetragonal phase of perovskite ferroelectrics is studied. The effect is shown to lower the symmetry of 180-degree walls which are oblique with…

Materials Science · Physics 2015-06-05 P. V. Yudin , A. K. Tagantsev , E. A. Eliseev , A. N. Morozovska , N. Setter

The newly-discovered ferroelectric nematic liquid crystal exhibits a variety of unique defect phenomena. The depolarization field in the material favors spontaneous spatial variations in polarization, manifesting in diverse forms such as…

Soft Condensed Matter · Physics 2025-07-17 Maxim O. Lavrentovich , Priyanka Kumari , Oleg D. Lavrentovich

Intrinsic domain wall width is a fundamental parameter that reflects bulk ferroelectric properties and governs the performance of ferroelectric memory devices. We present closed-form analytical expressions for vertical and lateral…