Related papers: Ultrahigh electron mobility in suspended graphene
Monolayer epitaxial graphene (EG) grown on hexagonal Si-terminated SiC substrates is intrinsically electron-doped (carrier density is about 10^13 cm^(-2)). We demonstrate a clean device fabrication process using a precious-metal protective…
We show that the plasmon spectrum of an ordinary two-dimensional electron gas (2DEG) hosted in a GaAs heterostructure is significantly modified when a graphene sheet is placed on the surface of the semiconductor in close proximity to the…
We probe the local inhomogeneities in the electronic properties of exfoliated graphene due to the presence of charged impurities in the SiO2 substrate using a combined scanning tunneling and electrostatic force microscope. Contact potential…
When electrons are confined in two-dimensional (2D) materials, quantum mechanically enhanced transport phenomena, as exemplified by the quantum Hall effects (QHE), can be observed. Graphene, an isolated single atomic layer of graphite, is…
A ballistic strip of graphene (width W>> length L) connecting two normal metal contacts is known to have a minimum conductivity of 4e^{2}/pi h at the Dirac point of charge neutrality. We calculate what happens if one of the two contacts…
We study the effects of low-energy electron beam irradiation up to 10 keV on graphene based field effect transistors. We fabricate metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO$_2$, obtaining specific…
The perfect transmission of charge carriers through potential barriers in graphene (Klein tunneling) is a direct consequence of the Dirac equation that governs the low-energy carrier dynamics. As a result, localized states do not exist in…
The conductivity of graphene samples with various levels of disorder is investigated for a set of specimens with mobility in the range of $1-20\times10^3$ cm$^2$/V sec. Comparing the experimental data with the theoretical transport…
Graphene demonstrated potential for practical applications owing to its excellent electronic and thermal properties. Typical graphene field-effect transistors and interconnects built on conventional SiO2/Si substrates reveal the breakdown…
Two-dimensional electron systems (2DESs) confined to the surface of narrowband semiconductors have attracted great interest since they can easily integrate with superconductivity (or ferromagnetism) enabling new possibilities in hybrid…
Photon-assisted electron transport in ballistic graphene is analyzed using scattering theory. We show that the presence of an ac signal (applied to a gate electrode in a region of the system) has interesting consequences on electron…
While heterostructures are ubiquitous tools enabling new physics and device functionalities, the palette of available materials has never been richer. Combinations of two emerging material classes, two-dimensional materials and topological…
An energy gap can be opened in the electronic spectrum of graphene by lifting its sublattice symmetry. In bilayers, it is possible to open gaps as large as 0.2 eV. However, these gaps rarely lead to a highly insulating state expected for…
In this work, high field carrier transport in two dimensional (2D) graphene is investigated. Analytical models are applied to estimate the saturation currents in graphene, based on the high scattering rate of optical phonon emission.…
Folded single layer graphene forms a system of two decoupled monolayers being only a few Angstroms apart. Using magnetotransport measurements we investigate the electronic properties of the two layers conducting in parallel. We show a…
A yet unexplored area in graphene electronics is the field of quantum ballistic transport through graphene nanostructures. Recent developments in the preparation of high mobility graphene are expected to lead to the experimental…
A new transport regime of photon in two-dimensional photonic crystal near the Dirac point has been demonstrated by exact numerical simulation. In this regime, the conductance of photon is inversely proportional to the thickness of sample,…
Recent experiments reveal a significant increase in the graphene Fermi velocity close to charge neutrality. This has widely been interpreted as a confirmation of the logarithmic divergence of the graphene Fermi velocity predicted by a…
We predict unusual (for non-relativistic quantum mechanics) electron states in graphene, which are localized within a finite-width potential barrier. The density of localized states in the sufficiently high and/or wide graphene barrier…
We report scanning tunneling microscopy (STM) and spectroscopy (STS) of twisted graphene bilayer on SiC substrate. For twist angle ~ 4.5o the Dirac point ED is located about 0.40 eV below the Fermi level EF due to the electron doping at the…