Related papers: Detection of spin reversal and nutations through c…
Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in…
We study current fluctuations in an interacting three-terminal quantum dot with ferromagnetic leads. For appropriately polarized contacts, the transport through the dot is governed by a novel dynamical spin blockade, i.e., a spin-dependent…
We present evidence for spin-charge separation in the tunneling spectrum of a system consisting of two quantum wires connected by a long narrow tunnel junction at the edge of a GaAs/AlGaAs bilayer heterostructure. Multiple excitation…
Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…
Current fluctuations can provide additional insight into quantum transport in mesoscopic systems. The present work is carried out for the fluctuation properties of transport through a pair of coupled quantum dots which are connected with…
We study tunneling in ferromagnet/unconventional superconductor (F/S) junctions. We include the effects of spin polarization, interfacial resistance, and Fermi wavevector mismatch (FWM) between the F and S regions. Andreev reflection (AR)…
Two channels of the sd exchange interaction are considered in magnetic junctions. The first channel describes the interaction of transversal spins with the lattice magnetization. The second one describes the interaction of longitudinal…
We present a theory of the current-voltage characteristics of a magnetic domain wall between two highly spin-polarized materials, which takes into account the effect of the electrical bias on the spin-flip probability of an electron…
The responses of the electrical current and the current-induced spin transfer torque (CISTT) to an ac bias in addition to a dc bias in a magnetic tunnel junction are investigated by means of the time-dependent nonquilibrium Green function…
The spin-transfer effect has been studied in magnetic tunnel junctions (PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe) with dimensions down to 0.1x0.2 um2 and resistance-area product RA in the range of 0.5-10 Ohm m2 (dR/R=1-20%). Current-induced…
We study theoretically the detection and possible utilization of electric current-induced mechanical torques in ferromagnetic-normal metal heterostructures that are generated by spin-flip scattering or the absorption of transverse spin…
We calculate current, spin current and tunnel magnetoresistance (TMR) for a quantum dot coupled to ferromagnetic leads in the presence of a square wave of bias voltage. Our results are obtained via time-dependent nonequilibrium Green…
We have calculated the spin-polarization effects of a current in a two dimensional electron gas which is contacted by two ferromagnetic metals. In the purely diffusive regime, the current may indeed be spin-polarized. However, for a typical…
We investigate the time-dependent fluctuations of the electric current injected from a reservoir with a non-equilibrium spin accumulation into a mesoscopic conductor. We show how the current noise power directly reflects the magnitude of…
We analyze the charge and spin dynamics in a DC biased double quantum dot driven by crossed DC and AC magnetic fields. In this configuration, spatial delocalization due to inter-dot tunnel competes with intra-dot spin rotations induced by…
We theoretically study the spin-dependent transport in a ferromagnet/superconductor/ferro-magnet double barrier tunnel junction. The spin-polarized tunneling currents give rise to spin imbalance in the superconductor. The resulting…
We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si…
The statistics of electron transport in a quantum conductor is affected by fluctuations of its voltage bias. Here we show experimentally how a third order correlation in the electromagnetic field arises from the noise of a tunnel junction…
We have investigated the mechanism at the origin of the infra-red radiation emitted by a biased tunnel junction by detecting photons at frequencies $\nu<eV/h$. To address this regime, the bias voltage $V$ exceeds one volt and the potential…
Micromagnetic instabilities and non-uniform magnetization states play a significant role in spin transfer induced switching of nanometer scale magnetic elements. Here we model domain wall mediated switching dynamics in perpendicularly…