Related papers: Phase coherent transport in (Ga,Mn)As
The Aharonov-Bohm (AB) interference patterns in ring-shaped conductors are usually dominated by random features. The amplitude of the oscillations is random from sample to sample and from point to point on the magnetic field axis owing to…
We calculate magnetic field fluctuations above a conductor with a nonlocal response (spatial dispersion) and consider a large range of distances. The cross-over from ballistic to diffusive charge transport leads to reduced noise spectrum at…
This work investigates the quantum transport in a narrow constriction acted upon by a finite-range transversely polarized time-dependent electric field. A generalized scattering-matrix method is developed that has incorporated a…
We investigate quantum coherence of electron spin transported through a semiconductor spintronic device, where spins are envisaged to be controlled by electrical means via spin-orbit interactions. To quantify the degree of spin coherence,…
Quasi-ballistic semiconductor quantum wires are exposed to localized perpendicular magnetic fields, also known as magnetic barriers. Pronounced, reproducible conductance fluctuations as a function of the magnetic barrier amplitude are…
We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of…
Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular…
We report on a comprehensive study of the ferromagnetic moment per Mn atom in (Ga,Mn)As ferromagnetic semiconductors. Theoretical discussion is based on microscopic calculations and on an effective model of Mn local moments…
The attainability of modification of the apparent magnetic anisotropy in (III,Mn)V ferromagnetic semiconductors is probed by means of the finite-elements-based modelling. The most representative case of (Ga,Mn)As and its in-plane uniaxial…
While the size of functional elements in memristors becomes of the orders of nano-meters or even smaller, the quantum effects in their dynamics can significantly influence their transport properties, consistent with recent experimental…
Coherent electronic transport through individual molecules is crucially sensitive to quantum interference. Using exact diagonalization techniques, we investigate the zero-bias and zero-temperature conductance through $\pi$-conjugated…
Conductance fluctuations in GaAs quantum dots with spin-orbit and Zeeman coupling are investigated experimentally and compared to a random matrix theory formulation that defines a number of regimes of spin symmetry depending on experimental…
This work shows that a strongly correlated phase which is gapped to collective spin excitations but gapless to charge fluctuations emerges as a universal feature in one-dimensional fermionic systems obeying certain symmetries. Namely,…
Quantum coherence is of crucial importance for the applicability of donor based quantum computing. In this Letter we describe the observation of the interference of conduction paths induced by two donors in a nano-MOSFET resulting in a Fano…
We study the effect of the electron-electron interaction on the weak localization correction of a ring pierced by a magnetic flux. We compute exactly the path integral giving the magnetoconductivity for an isolated ring. The results are…
Charge transport in amorphous semiconductors is considerably more complicated than process in crystalline materials due to abundant localized states. In addition to device-scale characterization, spatially resolved measurements are…
Effects of disorder on the electronic transport properties of graphene are strongly affected by the Dirac nature of the charge carriers in graphene. This is particularly pronounced near the Dirac point, where relativistic charge carriers…
Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn doping in the range of low Mn content, up to 1.2%.…
We obtain exact analytical expressions for the electronic transport through a multi-channel system, also with an applied magnetic field. The geometrical structure of the electrodes is found to cause a splitting of the conduction band into…
In this review article we briefly summarize the main experimental properties of (III,Mn)V ferromagnets and outline several different but related approaches that have been explored in an effort to gain insight into these materials. The main…