Related papers: Quantum kinetic equation and universal conductance…
In graphene, the valleys represent spin-like quantities and can act as a physical resource in valley-based electronics to novel quantum computation schemes. Here we demonstrate a direct route to tune and read the valley quantum states of…
The temperature effect of quantum interference on resistivity is examined in monolayer graphene, with experimental results showing that the amplitude of the conductance fluctuation increases as temperature decreases. We find that this…
The conductance fluctuations for various types for two-- and three--dimensional disordered systems with hard wall and periodic boundary conditions are studied, all the way from the ballistic (metallic) regime to the localized regime. It is…
The relationship between the universal conductance fluctuation and the weak localization effect in monolayer graphene is investigated. By comparing experimental results with the predictions of the weak localization theory for graphene, we…
We study conductance fluctuations (CF) and the sensitivity of the conductance to the motion of a single scatterer in two-dimensional massless Dirac systems. Our extensive numerical study finds limits to the predicted universal value of CF.…
Mesoscopic conductance fluctuations in graphene samples at energies not very close to the Dirac point are studied analytically. We demonstrate that the conductance variance $<[\delta G]^2>$ is very sensitive to the elastic scattering…
We report several quantum interference effects in graphene grown by chemical vapor deposition. A crossover between weak localization and weak antilocalization effects is observed when varying the gate voltage and we discuss the underlying…
We report measurements of magnetoresistance in single-layer graphene as a function of gate voltage (carrier density) at 250 mK. By examining signatures of weak localization (WL) and universal conductance fluctuations (UCF), we find a…
Graphene provides a fascinating testbed for new physics and exciting opportunities for future applications based on quantum phenomena. To understand the coherent flow of electrons through a graphene device, we employ a nanoscale probe that…
Magnetic field dependent universal conductance fluctuations (UCF's) are observed in weakly disordered indium tin oxide nanowires from 0.26 K up to $\sim 25$ K. The fluctuation magnitudes increase with decreasing temperature, reaching a…
We study fluctuations of the conductance of micron-sized graphene devices as a function of the Fermi energy and magnetic field. The fluctuations are studied in combination with analysis of weak localization which is determined by the same…
We discuss the effect of certain types of static disorder, like that induced by curvature or topological defects, on the quantum correction to the conductivity in graphene. We find that when the intervalley scattering time is long or…
We study quantum transport in Dirac materials with a single fermionic Dirac cone (strong topological insulators and graphene in the absence of intervalley coupling) in the presence of non-Gaussian long-range disorder. We show, by directly…
We investigate the universal properties of quantum transport in graphene nanowires that engender subtle universal conductance fluctuations. We present results for three of the main microscopic models that describe the sublattice of graphene…
We report a novel phenomenon that the universal conductance fluctuations (UCF) can be suppressed by a small electric field E. The experiment has been carried out on single crystals of Si doped heavily with P and B beyond the critical…
Universal conductance fluctuations (UCFs) are extracted in the magnetoresistance responses in the bulk-insulating Bi2Te2Se microflakes. Its two-dimensional character is demonstrated by the field-tilting magnetoresistance measurements. Its…
Pristine graphene and graphene-based heterostructures exhibit exceptionally high electron mobility and conductance if their surface contains few electron-scattering impurities. Here, we reveal a universal connection between graphene's…
Band gap engineering in graphene may open the routes towards transistor devices in which electric current can be switched off and on at will. One may, however, ask if a semiconducting band gap alone is sufficient to quench the current in…
Nonuniform strain in graphene acts as a valley-dependent gauge field, generating pseudomagnetic fields (PMFs) that mimic real magnetic fields but preserve global time-reversal symmetry. While local probes have visualized such fields, their…
The conductance of graphene subject to a strong, tilted magnetic field exhibits a dramatic change from insulating to conducting behavior with tilt-angle, regarded as evidence for the transition from a canted antiferromagnetic (CAF) to a…