Related papers: Giant dynamical Zeeman split in inverse spin valve…

We propose and demonstrate that a EuO-induced and top-gated graphene ferromagnetic junction can be simultaneously operated as a spin filter as well as a spin valve. We attribute such a remarkable result to a coexistence of a half-metal band…

The anisotropic spin splitting in unconventional magnets opens new opportunities for realizing spintronic functionalities without relying on net magnetization or relativistic spin-orbit coupling. Here, we propose a spin valve and a spin…

Electron valleys in transition-metal dichalcogenide monolayers drive novel physics and allow designing multifunctional architectures for applications. We propose to manipulate the electron valleys in these systems for spin/valley filter and…

A mesoscopic spin valve is used to determine the effective spin polarization of electrons tunneling from and into ferromagnetic transition metals at finite voltages. The tunneling spin polarization from the ferromagnet (FM) slowly decreases…

The Coulomb interaction between electrons of opposite spin orientations in a metal or in a doped semiconductor results in a negative off-diagonal component of the electrical resistivity matrix -- the so-called "spin-drag resistivity". It is…

Atomically thin two-dimensional layer of honeycomb crystalline carbon known as graphene is a promising system for electronics. It has a point-like Fermi surface, which is very sensitive to external potentials. In particular, Zeeman magnetic…

Half-metal ferromagnets were predicted [in IEEE Trans. Mag. 51, 1 (2015)] to give large thermoelectric performance in anti-parallel spin valve configuration. Despite being metals that suffer from the Wiedemann-Franz law, the additional spin…

Half metals, which are amenable to perfect spin filtering, can be utilized for high-magnetoresistive devices. However, available half metals are very limited. Here, we demonstrate that materials with intrinsic spin-valley-mismatched (SVM)…

Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The…

We study the spin-dependent conductance of ballistic mesoscopic ring systems in the presence of an inhomogeneous magnetic field. We show that, for the setup proposed, even a small Zeeman splitting can lead to a considerable spin…

We propose the idea of a "spinguide", i.e. the semiconductor channel which is surrounded with walls from the diluted magnetic semiconductor (DMS) with the giant Zeeman splitting which are transparent for electrons with the one spin…

We consider a thin-film normal metal/superconductor junction in the presence of an externally applied in-plane magnetic field for several symmetries of the superconducting order parameter. For p-wave superconductors, a strongly…

We theoretically propose a nonreciprocal spin Seebeck effect, i.e., nonreciprocal spin transport generated by a temperature gradient, in antiferromagnetic insulators with broken inversion symmetry. We find that nonreciprocity in…

We propose spin valves where a 2D non-magnetic conductor is intercalated between two ferromagnetic insulating layers. In this setup, the relative orientation of the magnetizations of the insulating layers can have a strong impact on the…

Semiconductor holes with strong spin-orbit coupling allow all-electrical spin control, with broad applications ranging from spintronics to quantum computation. Using a two-dimensional hole system in a GaAs quantum well, we demonstrate a new…

Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin…

The spin-transfer in biased disordered ferromagnet (F) - normal metal (N) systems is calculated by the diffusion equation. For F1-N2-F2 and N1-F1-N2-F2-N3 spin valves, the effect of spin-flip processes in the normal metal and ferromagnet…

We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into…

Magnetic gates in close proximity to graphene can induce ferromagnetic correlations. We study the effect of such induced magnetization dependent Zeeman splittings on the graphene transport properties. We estimate that induced spin…

We investigate electronic transport through II-VI semiconductor resonant tunneling structures containing diluted magnetic impurities. Due to the exchange interaction between the conduction electrons and the impurities, there arises a giant…