Related papers: Joule Expansion Imaging Techniques on Microlectron…
The displacement field of an object surface can be measured by using speckle interferometry. This technique is based on the phenomenon of laser speckle and consists in correlating speckle interferograms taken after and before the…
Semiconductor heterojunctions have gained significant attention for efficient optoelectronic devices owing to their unique interfaces and synergistic effects. Interaction between charge carriers with the heterojunction plays a crucial role…
Low-energy electron microscopy (LEEM) is a surface science method that works primarily in the UHV environment. It provides information complementary to the other established techniques: it extends the limited view of scanning probe…
Research in semiconductor physics has advanced to the study of two-dimensional (2D) materials where the surface controls electronic transport. A scanning probe microscope (SPM) is an ideal tool to image electronic motion in these devices by…
We propose to use a Nomarski imaging interferometer to measure the out-of-plane displacement field of MEMS. It is shown that the measured optical phase arises both from height and slope gradients. Using four integrating buckets a more…
Electron energy loss spectroscopy is consolidating as a powerful tool to explore electronic (as well as vibrational) excitations of matter, including molecules. Performed in a scanning transmission electron microscope, this technique is…
We introduce a new scanning probe technique derived from scanning gate microscopy (SGM) in order to investigate thermoelectric transport in two-dimensional semiconductor devices. The thermoelectric scanning gate Microscopy (TSGM) consists…
In this study the possibility of combining commercial Scanning Force Microscopes (SFM) with stretching devices for the investigation of microscopic surface changes during stepwise elongation is investigated. Different types of stretching…
Electrochemical strains are a ubiquitous feature of solid state ionic devices ranging from ion batteries and fuel cells to electroresistive and memristive memories. Recently, we proposed a scanning probe microscopy (SPM) based approach,…
Scanning transmission X-ray microscopy (STXM) is a nanoscale imaging technique that can utilize several powerful contrast mechanisms for the quantitative mapping of chemical and physical materials properties. Spatial resolutions down to…
Scanning electron microscopy (SEM), a century-old technique, is today a ubiquitous method of imaging the surface of nanostructures. However, most SEM detectors simply count the number of secondary electrons from a material of interest, and…
The dynamics of photo-excited charge carriers, particularly their transport and interactions with defects and interfaces, play an essential role in determining the performance of a wide range of solar and optoelectronic devices. A thorough…
We use a cooled Scanning Probe Microscope (SPM) to electron motion in nanoscale devices. The charged tip of the SPM is raster scanned at a constant height above the surface as the conductance of the device is measured. The image charge…
Scanning Probe Microscopy is used to study and quantify the nanoscale electric phenomena in the two classes of oxide systems, namely transport at electroactive grain boundaries and surface behavior of ferroelectric materials. Scanning…
As the fields of optical microscopy, semiconductor technology and fundamental science increasingly aim for precision at or below the nanoscale, there is a burgeoning demand for sub-nanometric displacement and position sensing. We show that…
Harnessing electron spin is crucial in developing energy-saving and high-speed devices for the next generation. In this scheme, visualizing spin-polarized electronic states aids in designing and developing new materials and devices.…
Nanoelectromechanical systems (NEMSs) are emerging nanoscale elements at the crossroads between mechanics, optics and electronics, with significant potential for actuation and sensing applications. The reduction of dimensions compared to…
We measure power dissipation in phase change memory (PCM) devices by scanning Joule ex-pansion microscopy (SJEM) with ~50 nm spatial and 0.2 K temperature resolution. The temperature rise in the Ge2Sb2Te5 (GST) is dominated by Joule…
Scanning Kelvin probe microscopy (SKPM) is a powerful technique for macroscopic imaging of the electrostatic potential above a surface. Though most often used to image work-function variations of conductive surfaces, it can also be used to…
The application of PhotoEmission Electron Microscopy (PEEM) and Low Energy Electron Microscopy (LEEM) techniques to the study of the electronic and chemical structure of ferroelectric materials is reviewed. Electron optics in both…