Related papers: Electric field effect on electron spin splitting i…
Dynamic response of two-dimensional electron systems with spin-orbit interaction is studied theoretically on the basis of quantum kinetic equation, taking into account elastic scattering of electrons. The spin polarization and spin current…
Multi-subband effect on spin precession and spin dephasing in $n$-type GaAs quantum wells is studied with electron-electron and electron-phonon scattering explicitly included. The effects of temperature, well width and applied electric…
The effect of spin polarization, induced by the difference in concentration of spin-up and spin-down electrons produced under the influence of a magnetic field, on lattice ion vibrationselectron wave interactions, and the resulting…
We present a theoretical analysis of dynamic spin injection due to spin-dependent tunneling between a quantum well (QW) and a bound state split in spin projection due to an exchange interaction or external magnetic field. We focus on the…
We report novel manifestation of the valley splitting for the two valley electron system in (100) Si-inversion layers at low carrier density. We found that valley splitting causes almost 100% modulation of the Shubnikov de Haas oscillations…
We present an $sp^3$ tight-binding model for the calculation of the electronic and optical properties of wurtzite semiconductor quantum dots (QDs). The tight-binding model takes into account strain, piezoelectricity, spin-orbit coupling and…
A scattering mechanism stemming from the Stark-shift of energy levels by electric fields in semiconductor quantum wells is identified. This scattering mechanism feeds off interface roughness and electric fields, and modifies the well known…
Recent progress in experimental studies of low-dimensional systems with strong spin-orbit coupling poses a question on the effect of this coupling on the energy spectrum of electrons in semiconductor nanostructures. It is shown in the paper…
The total spin of correlated electrons in a quantum dot changes with magnetic field and this effect is generally linked to the change in the total angular momentum from one magic number to another, which can be understood in terms of an…
Relaxation of a non-equilibrium state in a disordered metal with a spin-dependent electron energy distribution is considered. The collision integral due to the electron-electron interaction is computed within the approximation of a…
The electronic structure of surfaces and interfaces plays a key role in the properties of quantum devices. Here, we study the electronic structure of realistic Al/InAs/Al heterojunctions using a combination of density functional theory…
Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit…
It is shown that a homogeneous non-equlibrium spin-polarization in semiconductor heterostructures results in an electric current. The microscopic origin of the effect is an inherent asymmetry of spin-flip scattering in systems with lifted…
We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field…
We investigate the electronic structure of a two-dimensional electron gas created at the surface of the multi-valley semimetal 1T-PtSe$_2$. Using angle-resolved photoemission and first-principles-based surface space charge calculations, we…
We investigate theoretically the coherent longitudinal and transversal spin relaxation of photoexcited electrons in quantum wells in quantized magnetic fields. We find the relaxation time for typical quantum well parameters between 100 and…
We theoretically describe the spin excitation spectrum of a two dimensional electron gas embedded in a quantum well with localized magnetic impurities. Compared to the previous work, we introduce equations that allow to consider the…
The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by timeresolved photoluminescence spectroscopy. By applying an external field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be…
We investigate the behavior of spin polarized currents in two-dimensional topological insulators (TI). Stationary solutions inside a HgTe/CdTe quantum well (QW) were obtained by Bernevig-Hughes-Zhang (BHZ) model modified by a electric and…
We investigate the spin dynamics of high-mobility two-dimensional electrons in GaAs/AlGaAs quantum wells grown along the $[001]$ and $[110]$ directions by time-resolved Faraday rotation at low temperatures. In measurements on the…