Related papers: Self-aligned charge read-out for InAs nanowire qua…
We report on correlated real-time detection of individual electrons in an InAs nanowire double quantum dot. Two self-aligned quantum point contacts in an underlying two-dimensional electron gas material serve as highly sensitive charge…
We report an experimental study of a one-dimensional quintuple-quantum-dot array integrated with two quantum dot charge sensors in an InAs nanowire. The device is studied by measuring double quantum dots formed consecutively in the array…
We have developed an etching process to fabricate a quantum dot and a nearby single electron transistor as a charge detector in a single layer graphene. The high charge sensitivity of the detector is used to probe Coulomb diamonds as well…
We measure current by counting single electrons tunneling through an InAs nanowire quantum dot. The charge detector is realized by fabricating a quantum point contact in close vicinity to the nanowire. The results based on electron counting…
We report on charge detection in electrostatically-defined quantum dot devices in bilayer graphene using an integrated charge detector. The device is fabricated without any etching and features a graphite back gate, leading to high quality…
Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined…
A serial triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized from an InAs nanowire via a fine finger-gate technique. The complex charge states and intriguing properties of the device are studied in the…
A gate-defined quantum dot in an InAs nanowire is fabricated on top of a quantum point contact realized in a two-dimensional electron gas. The strong coupling between these two quantum devices is used to perform time-averaged as well as…
The detection of the quantum dot charge state using a quantum point contact charge detector has opened a new exciting route for the investigation of quantum dot devices in recent years. In particular, time-resolved charge detection allowed…
We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass…
Spin qubits in germanium are a promising contender for scalable quantum computers. Reading out of the spin and charge configuration of quantum dots formed in Ge/Si core/shell nanowires is typically performed by measuring the current through…
A linear triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized. The TQD and the charge sensor are built from two adjacent InAs nanowires by fine finger gate technique. The charge state configurations of the…
We report measurements on a graphene quantum dot with an integrated graphene charge detector. The quantum dot device consists of a graphene island (diameter approx. 200 nm) connected to source and drain contacts via two narrow graphene…
Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on…
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped…
Dispersive sensing is a powerful technique that enables scalable and high-fidelity readout of solid-state quantum bits. In particular, gate-based dispersive sensing has been proposed as the readout mechanism for future topological qubits,…
We use a nanowire quantum dot to probe high-frequency current fluctuations in a nearby quantum point contact. The fluctuations drive charge transitions in the quantum dot, which are measured in real-time with single-electron detection…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
InAs/GaAs quantum dots (QDs) and quantum dot molecules (QDMs) are self-assembled semiconductor nanostructures that can trap a single electron or hole with well-defined spin projections. QDs and QDMs have excellent optical properties and…
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated…