Related papers: Symmetry and spin dephasing in (110)-grown quantum…
The paper reports optical orientation experiments performed in the narrow GaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate a control over the spin polarization by means of the optical orientation via the…
We formulate a model of the time-resolved Kerr rotation experiment on a single hole in a semiconductor nanostructure (e.g., a quantum dot) or on an ensemble of trapped holes (e.g., in a quantum well) in a tilted magnetic field. We use a…
We have measured the donor-bound electron spin dynamics in cubic GaN by time-resolved Kerr rotation experiments. The ensemble electron spin dephasing time in this quantum dot like system characterized by a Bohr radius of 2.5 nm is of the…
Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time $T_2^* \sim 0.18~\mathrm{\mu s}$ exceeds…
We have studied spin dephasing and spin diffusion in a high-mobility two-dimensional electron system, embedded in a GaAs/AlGaAs quantum well grown in the [110] direction, by a two-beam Hanle experiment. For very low excitation density, we…
We have studied the spin dynamics of a dense two-dimensional electron gas confined in a GaAs/AlGaAs triple quantum well by using time-resolved Kerr rotation and resonant spin amplification. Strong anisotropy of the spin relaxation time up…
Hole spin relaxation in $p$-type (111) GaAs quantum wells is investigated in the case with only the lowest hole subband, which is heavy-hole like in (111) GaAs/AlAs and light-hole like in (111) GaAs/InP quantum wells, being relevant. The…
System consisting of a number of trapped atoms evolving under the influence of external inhomogenous magnetic field undergoes spin dephasing: classically, since each atom feels different field along its trajectory, the spin rotation rates…
Photoluminescence (PL) and highly circularly-polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum…
We investigate the electron spin dephasing in the presence of spin phase recovering by a serried $\pi$-pulse sequence in $n$-type (001) GaAs quantum wells in a wide range of temperature and density regimes. Our numerical calculation is…
We use time-resolved Kerr rotation to demonstrate the optical and electronic tuning of both the electronic and local moment (Mn) spin dynamics in electrically gated parabolic quantum wells derived from II-VI diluted magnetic semiconductors.…
The D'yakonov-Perel' spin relaxation mechanism in n-doped GaAs/AlGaAs quantum wells (QWs) has been studied both theoretically and experimentally. The temperature dependence of the spin relaxation time has been calculated for arbitrary…
Based on a multi-particle-state stimulated Raman adiabatic passage approach, a comprehensive theoretical study on the ultrafast optical manipulation of electron spins in quantum wells is presented. In addition to corroborating the…
The dynamic polarization of nuclear spins by photoexcited electrons is studied in a high quality GaAs/AlGaAs quantum well. We find a surprisingly high efficiency of the spin transfer from the electrons to the nuclei as reflected by a…
We examine effects of inversion asymmetry of a GaAs/Al0.3Ga0.7As quantum well (QW) on electron-nuclear spin coupling in the fractional quantum Hall (QH) regime. Increasing the QW potential asymmetry at a fixed Landau-level filling factor…
A theory of the circular photogalvanic effect caused by spin splitting in quantum wells is developed. Direct interband transitions between the hole and electron size-quantized subbands are considered. The photocurrent excitation spectrum is…
Understanding the spin dephasing mechanism is of fundamental importance in all potential applications of the spin qubit. Here we demonstrate a spin dephasing mechanism in semiconductor quantum dot due to the $1/f$ charge noise. The…
The effect of uniaxial tensile strain on spin coherence in n-type GaAs epilayers is probed using time-resolved Kerr rotation, photoluminescence, and optically-detected nuclear magnetic resonance spectroscopies. The bandgap, electron spin…
We study decoherence of nuclear spins in a GaAs quantum well structure using resistively detected nuclear magnetic resonance. The transverse decoherence time T2 of 75As nuclei is estimated from Rabi-type coherent oscillations as well as by…
This paper discusses the combined effects of optical excitation power, interface roughness, lattice temperature, and applied magnetic fields on the spin-coherence of excitonic states in GaAs/AlGaAs multiple quantum wells. For low optical…