Related papers: Magnetic Moment Collapse-Driven Mott Transition in…
We construct a holographic model in the framework of Q-lattices whose dual exhibits metal-insulator transitions. By introducing an interacting term between the Q-lattice and the electromagnetic field in bulk geometry, we find such kind of…
Achieving fundamental understanding of insulator-to-metal transitions (IMTs) in strongly correlated systems and their persistent and reversible control via nonequilibrium drive are prime targets of current condensed matter research.…
By means of exact diagonalizations, the Bernevig-Hughes-Zhang model at quarter-filling in the limit of strong Hubbard on-site repulsion is investigated. We find that the non-interacting metallic state will be turned into a Chern insulator…
In the field of interacting electron systems the Mott metal-to-insulator (MI) transition represents one of the pivotal issues. The role played by lattice degrees of freedom for the Mott MI transition and the Mott criticality in a variety of…
We study a bandwidth controlled Mott metal-insulator transition (MIT) between a Fermi liquid metal and a quantum spin-liquid insulator at half-filling in three dimensions (3D). Using a slave rotor approach, and incorporating gauge field…
This review first describes the evidence that strongly suggests the existence of the metal-insulator transition (MIT) in a two-dimensional electron system in Si regardless of the amount of disorder. Extensive studies of the charge dynamics…
September 30, 2015 marks the 110th anniversary of the birth of the famous English physicist N. F. Mott. This article is dedicated to his memory. Here we consider the problem of metal-insulator transition. It is shown that the Mott criterion…
The metal-insulator transition in VO2 was investigated using the three-band Hubbard model, in which the degeneracy of the 3d orbitals, the on-site Coulomb and exchange interactions, and the effects of lattice distortion were considered. A…
In this paper we critically discuss several examples of two-dimensional electronic systems displaying interaction-driven metal-insulator transitions of the Mott (or Wigner--Mott) type, including dilute two-dimension electron gases (2DEG) in…
We studied several aspects of the Mott metal-insulator transition in the disordered case. The model on which we based our analysis is the disordered Hubbard model, which is the simplest model capable of capturing the Mott metal-insulator…
The bad-metal behavior of the iron pnictides has motivated a theoretical description in terms of a proximity to Mott localization. Since the parent compounds of the iron pnictides contain an even number of 3d-electrons per Fe, it is…
Phase transitions are key in determining and controlling the quantum properties of correlated materials. Here, by using the powerful combination of precise material synthesis and angle resolved photoelectron spectroscopy, we show evidence…
Memory effects during metal-insulator transitions in quantum materials reveal complex physics and potential for novel electronics mimicking biological neural systems. Nonetheless, understanding of memory and nonlinearity in sequential…
We report an isothermal electric field-induced first-order phase transition from Mott-insulator to the metallic state in the epitaxial thin film of V$_2$O$_3$ in the temperature regime below its Mott transition temperature $\approx$ 180 K.…
We describe a new possible route to the metal-insulator transition in doped semiconductors such as Si:P or Si:B. We explore the possibility that the loss of metallic transport occurs through Mott localization of electrons into a quantum…
Elucidating the physics of the single-orbital Hubbard model in its intermediate coupling regime is a key missing ingredient to our understanding of metal-insulator transitions in real materials. Using recent non-perturbative many-body…
We explore the ground-state properties of the two-band Hubbard model with degenerate electronic bands, parametrized by nearest-neighbor hopping $t$, intra- and inter-orbital on-site Coulomb repulsions $U$ and $U^\prime$, and Hund coupling…
We consider a heterostructure of a metal and a paramagnetic Mott insulator using an adaptation of dynamical mean field theory to describe inhomogeneous systems. The metal can penetrate into the insulator via the Kondo effect. We investigate…
We investigate effects of Coulomb interaction and hopping transport in the insulator phase of granular metals and quantum dot arrays. We consider a spatially periodic as well as an irregular array, including disorder in a form of a random…
We compare the interaction parameters measured on LaMnO$_3$ to single site dynamical mean field estimates of the critical correlation strength needed to drive a Mott transition, finding that the total correlation strength (electron-electron…